Zobrazeno 1 - 10 of 53 pro vyhledávání: '"Etienne Pernot"'
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Akademický článek
Hazy Al2O3-FTO Nanocomposites: A Comparative Study with FTO-Based Nanocomposites Integrating ZnO and S:TiO2 Nanostructures
Autor: Shan-Ting Zhang, Guy Vitrant, Etienne Pernot, Carmen Jiménez, David Muñoz-Rojas, Daniel Bellet
Publikováno v: Nanomaterials, Vol 8, Iss 6, p 440 (2018)
In this study, we report the use of Al2O3 nanoparticles in combination with fluorine doped tin oxide (F:SnO2, aka FTO) thin films to form hazy Al2O3-FTO nanocomposites. In comparison to previously reported FTO-based nanocomposites integrating ZnO and
Externí odkaz: https://doaj.org/article/0a82ca93fe534d92bfd983e6ce087f0c
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2
Increasing Attractiveness of Electrical Engineering for Schoolers Through Experiments on Microelectronics and Nanotechnology Interuniversity Platforms
Autor: Robert Baptist, Olivier Bonnaud, Skandar Basrour, Ahmad Bsiesy, Etienne Pernot, Eric Martinet
Publikováno v: 2018 28th EAEEIE Annual Conference (EAEEIE)
2018 28th EAEEIE Annual Conference (EAEEIE), Sep 2018, Reykjavik, Iceland. pp.1-5, ⟨10.1109/eaeeie.2018.8534281⟩
The world is witnessing a new industrial revolution, which is the generation 4.0 of the industry and many jobs will be related to the development, production and use of connected objects. Thus, the field of microelectronics, at the heart of these obj
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::34ba7ec2e30d7bb0a06128852105b57b
https://hal.science/hal-01995417
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3
High quality epitaxial fluorine-doped SnO2 films by ultrasonic spray pyrolysis: Structural and physical property investigation
Autor: Shan-Ting Zhang, Hervé Roussel, Daniel Bellet, Andreas Klein, Laetitia Rapenne, Vincent Consonni, Jean-Luc Rouvière, David Muñoz-Rojas, Etienne Pernot
Publikováno v: Materials and Design
Materials and Design, Elsevier, 2017, 132, pp.518-525. ⟨10.1016/j.matdes.2017.07.037⟩
Materials & Design
Materials & Design, 2017, 132, pp.518-525. ⟨10.1016/j.matdes.2017.07.037⟩
Materials & Design, Vol 132, Iss, Pp 518-525 (2017)
International audience; • Epitaxial F-doped SnO2 (FTO) films are deposited on (110) rutile TiO2 for the first time using ultrasonic spray pyrolysis. • Epitaxial FTO film is of high structural quality with mosaic domains showing a narrow distribut
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ce5eeea684d543486713f720af83e59
https://hal.archives-ouvertes.fr/hal-01758851
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4
Tuning the properties of F:SnO 2 (FTO) nanocomposites with S:TiO 2 nanoparticles – promising hazy transparent electrodes for photovoltaics applications
Autor: Jean-Luc Deschanvres, Hervé Roussel, Carmen Jiménez, Lukas Schmidt-Mende, Shan-Ting Zhang, David Muñoz-Rojas, Etienne Pernot, Daniel Bellet, Vincent Consonni, Martin Foldyna, Laetitia Rapenne
Publikováno v: Journal of Materials Chemistry C
Journal of Materials Chemistry C, Royal Society of Chemistry, 2017, 5 (1), pp.91-102. ⟨10.1039/C6TC04153A⟩
The appropriate choice of nanoparticles is proved to be essential in tuning the properties of F:SnO2 (FTO) nanocomposites. With the use of more conductive sulphur-doped TiO2 (S:TiO2) nanoparticles, the sheet resistance of S:TiO2–FTO nanocomposites
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6f088c5052e0250b68ddd6bf6501cb9
https://hal-polytechnique.archives-ouvertes.fr/hal-01640069
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5
Hazy Al2O3-FTO Nanocomposites: A Comparative Study with FTO-Based Nanocomposites Integrating ZnO and S:TiO2 Nanostructures
Autor: David Muñoz-Rojas, Etienne Pernot, Shan-Ting Zhang, Carmen Jiménez, Daniel Bellet, G. Vitrant
Publikováno v: Nanomaterials
Volume 8
Issue 6
Nanomaterials, Vol 8, Iss 6, p 440 (2018)
Nanomaterials, MDPI, 2018, 8 (6), pp.440. ⟨10.3390/nano8060440⟩
In this study, we report the use of Al2O3 nanoparticles in combination with fluorine doped tin oxide (F:SnO2, aka FTO) thin films to form hazy Al2O3-FTO nanocomposites. In comparison to previously reported FTO-based nanocomposites integrating ZnO and
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a4a4316817eb1d56b88dd4892a5e96f
https://doi.org/10.3390/nano8060440
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6
High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding
Autor: Elisabeth Blanquet, Michel Pons, Michel Mermoux, Roland Madar, Guy Chichignoud, M Anikin, Etienne Pernot, Catherine Moisson, Didier Chaussende, Fabrice Letertre
Publikováno v: Hard Coatings and Vapor Deposition Technology
International Conference on Metallurgical cCoating and Thin Films, ICMCTF
International Conference on Metallurgical cCoating and Thin Films, ICMCTF, 2006, San Diego, United States
Surface and Coatings Technology
Surface and Coatings Technology, Elsevier, 2006, 201 (7), pp.4014-4020
The transfer by wafer-bonding of single-crystalline SiC thin films to a polycrystalline SiC substrate to obtain a “quasi-wafer” requires high quality polycrystalline substrates with controlled bulk properties (thermal conductivity, electrical res
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c424d1ade01dfef4515abfae2c03245
https://doi.org/10.1016/j.surfcoat.2006.08.097
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7
Giant Burgers Vector Micropipe-Dislocations in Silicon Carbide Investigated by Atomic Force Microscopy
Autor: Roland Madar, Etienne Pernot, Jürgen Härtwig, Michel Pons
Publikováno v: Materials Science Forum. :435-438
Recently, in some silicon carbide single crystals, some micropipes associated with screw dislocation have been observed by X-ray topography and the strain field around them produced images similar to those of screw dislocations with a very large Burg
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::02c2619f179ae7b7838e2c88ce12dbe2
https://doi.org/10.4028/www.scientific.net/msf.527-529.435
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8
Characterization of Bulk <111> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method
Autor: Jean Camassel, Didier Chaussende, Carole Balloud, Michel Pons, Laurence Latu-Romain, Etienne Pernot, Laetitia Rapenne, Sandrine Juillaguet, Roland Madar
Publikováno v: International Conference on Silicon Carbide and Related Materials (ICSCRM 2005)
International Conference on Silicon Carbide and Related Materials (ICSCRM 2005), Sep 2005, Pittsburgh, United States. pp.99-102, ⟨10.4028/www.scientific.net/MSF.527-529.99⟩
Scopus-Elsevier
Because of the formation of DPB (Double Positioning Boundary) when starting from a hexagonal seed, DPB-free 3C-SiC single crystals have never been reported up to now. In a recent work we showed that, using adapted nucleation conditions, one could gro
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a26ffcbf9a4d6a4b8e177b2b63203d2
https://doi.org/10.4028/www.scientific.net/msf.527-529.99
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10
Contribution of numerical simulation to silicon carbide bulk growth and epitaxy
Autor: Roland Madar, Michail Anikin, Lea Di Cioccio, Jérôme Meziere, Michel Pons, Etienne Pernot, Thierry Billon, Francis Baillet, J.M. Dedulle, Pierre Ferret, Elisabeth Blanquet
Publikováno v: Journal of Physics: Condensed Matter. 16:S1579-S1595
High temperature epitaxial processes for SiC bulk and thin films by physical vapour transport and chemical vapour deposition are reviewed from an academic point of view using heat and mass transfer modelling and simulation. The objective is to show t
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a0d8851a4ecd7ae3637682cba2c40e1e
https://doi.org/10.1088/0953-8984/16/17/009
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