Zobrazeno 1 - 10
of 1 886
pro vyhledávání: '"Etch pit density"'
Autor:
Wenwang Wei, Yi Peng, Yanlian Yang, Kai Xiao, Mudassar Maraj, Jia Yang, Yukun Wang, Wenhong Sun
Publikováno v:
Nanomaterials, Vol 12, Iss 22, p 3937 (2022)
The high crystal quality and low dislocation densities of aluminum nitride (AlN) grown on flat and nano-patterned sapphire substrate that are synthesized by the metal-organic chemical vapor deposition (MOCVD) method are essential for the realization
Externí odkaz:
https://doaj.org/article/9a1e86f62fcb4cae9ff0b558731df718
Autor:
Karolina Grabianska, Robert Kucharski, Tomasz Sochacki, Jan L. Weyher, Malgorzata Iwinska, Izabella Grzegory, Michal Bockowski
Publikováno v:
Crystals, Vol 12, Iss 4, p 554 (2022)
The results of basic ammonothermal crystallization of gallium nitride are described. The material is mainly analyzed in terms of the formation of stress (called stress-induced polarization effect) and defects (threading dislocations) appearing due to
Externí odkaz:
https://doaj.org/article/30fb347f853a47eb925003a9f1bb6352
Akademický článek
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Akademický článek
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Publikováno v:
Chinese Journal of Physics. 67:1-26
A nonlinear optical (NLO) sodium 4-methyl-3-nitrobenzoate monohydrate (Na4M3N) single crystal was synthesized and grown by the slow cooling solution growth method using an ethanol-water (1:1) mixed solvent. Powder X-ray diffraction (PXRD) reveals the
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:18732-18744
Semi-organic single crystal of ammonium bis (citrato) borate dihydrate (ABCBDH) was harvested by slow evaporation technique (SET). The nature of the solubility of the ABCBDH crystal has been investigated by the gravimetrical method with different tem
Publikováno v:
Journal of Electronic Materials. 49:6983-6989
In this work, multiple sets of CdZnTe/CdTe strained-layer superlattices have been used as dislocation filtering layers for reducing the threading dislocations and improving the material quality of CdTe buffer layers grown by molecular beam epitaxy (M
Autor:
Alexander Gybin, Kevin-Peter Gradwohl, Andreas N. Danilewsky, R. Radhakrishnan Sumathi, József Janicskó-Csáthy, Melissa Roder
Publikováno v:
Journal of Electronic Materials. 49:5097-5103
A germanium crystal of high purity was grown in H2 with a maximum dislocation density of 3000 cm−2, which was estimated by white beam x-ray topography. Due to a dynamical diffraction effect, the topographs revealed the existence of vacancy clusters
Publikováno v:
Journal of Electronic Materials. 49:5144-5153
The crystallinity of a 35-mm-diameter AlN single-crystal substrate grown by physical vapor transport was investigated using x-ray diffraction and Raman spectral mapping. Dislocations in the same sample were observed using an etch pit method, synchrot
Autor:
Pichan Karuppasamy, Muthu Senthil Pandian, Sunil Verma, Chandran Senthilkumar, P. Ramasamy, Tamilselvan Kamalesh
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:373-386
The organic 4-dimethylaminopyridinium 4-nitrophenolate 4-nitrophenol (DMAPNP) single crystal was grown by slow evaporation solution growth technique at 35 °C. The single crystal X-ray diffraction analysis confirms that the grown crystal belongs to t