Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Eswaran Parthasarathy"'
Autor:
M. Saravanan, Eswaran Parthasarathy
Publikováno v:
IEEE Access, Vol 12, Pp 56439-56447 (2024)
A triple-metal-gate stacked III–V vertical tunnel field-effect transistor (TM-GS-VTFET) structure is examined. There are two different TM-GS-VTFETs: Device-A, which uses a source pocket, and Device-B, which uses a new source extension approach. Sou
Externí odkaz:
https://doaj.org/article/cd1815e1a0e64402a86809f5a49437ec
Publikováno v:
Engineering Science and Technology, an International Journal, Vol 33, Iss , Pp 101084- (2022)
Object tracking and motion detection are the major challenges in the real-time image and video processing applications. There are several tracking and prediction algorithms available to estimate and predict the state of a system. Kalman filter is the
Externí odkaz:
https://doaj.org/article/bdda5b1ac0b34068b9a42fbd5a07688d
Autor:
Saminathan Thiruvenkadam, Eswaran Parthasarathy, Sandeep Kumar Palaniswamy, Sachin Kumar, Lulu Wang
Publikováno v:
Sensors, Vol 21, Iss 23, p 7909 (2021)
This article presents a quad-band multiple-input-multiple-output (MIMO) antenna for the Internet of Things (IoT) applications. The proposed antenna consists of four quarter-wavelength asymmetrical meandered radiators, microstrip feed lines, and modif
Externí odkaz:
https://doaj.org/article/e149ba055c04403ca3f69a442cff5946
Publikováno v:
IETE Journal of Research. :1-12
Autor:
M. Saravanan, Eswaran Parthasarathy
Publikováno v:
Journal of Electronic Materials. 52:2772-2779
Publikováno v:
Journal of Electromagnetic Waves and Applications. 37:629-643
Publikováno v:
Journal of Real-Time Image Processing. 19:931-940
Publikováno v:
2023 International Conference on Recent Advances in Electrical, Electronics, Ubiquitous Communication, and Computational Intelligence (RAEEUCCI).
Publikováno v:
Tunneling Field Effect Transistors ISBN: 9781003327035
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3f8aaf9d57876cb34f21c02774c091c
https://doi.org/10.1201/9781003327035-7
https://doi.org/10.1201/9781003327035-7
Influence of High-k Passivation Layer on Gate Field Plate AlGaN/GaN/AlGaN Double Heterojunction HEMT
Publikováno v:
Silicon. 14:10437-10445