Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Estes Wickenden, A."'
Publikováno v:
Journal of Electronic Materials. 23:509-512
The results of the first application of electrolyte electroreflectance and photoreflectance to single crystal films of gallium nitride grown by organometallic vapor phase epitaxy on sapphire are presented. Absorption measurements were also performed
Publikováno v:
Journal of Applied Physics. 75:5367-5371
It has been shown by optical and x‐ray measurements that GaN nucleation layers deposited at 540 °C on (0001)‐oriented sapphire substrates have a measurable crystalline component, although the x‐ray data and the lack of absorbance features near
Publikováno v:
MRS Proceedings. 280
Nucleation layers of GaN have been deposited in an MOCVD reactor on (0001) sapphire, over a range of temperatures and layer thicknesses, using either N2 or H2 carrier gas. The layers have been found to be continuous, textured films as deposited at lo
Autor:
Estes Wickenden, A., Wickenden, D. K., Kistenmacher, T. J., Ecelberger, S. A., Poehler, T. O.
Publikováno v:
MRS Online Proceedings Library; 02/22/1992, Vol. 280, pN.PAG-1, 1p
Publikováno v:
MRS Online Proceedings Library; 01/03/1991, Vol. 221, pN.PAG-1, 1p