Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Estados topologicamente protegidos"'
Autor:
Araújo, Augusto de Lelis
Publikováno v:
Repositório Institucional da UFUUniversidade Federal de UberlândiaUFU.
The main objective of this work is to research and obtain surface protected topological states in nano-ribbons created from the leaves of Germanene and Silicene. These sheets belong to the class of Topological Insulators and correspond to monolayers
Externí odkaz:
https://repositorio.ufu.br/handle/123456789/15668
Autor:
Augusto de Lelis Araújo
Publikováno v:
Repositório Institucional da UFU
Universidade Federal de Uberlândia (UFU)
instacron:UFU
Universidade Federal de Uberlândia (UFU)
instacron:UFU
The main objective of this work is to research and obtain surface protected topological states in nano-ribbons created from the leaves of Germanene and Silicene. These sheets belong to the class of Topological Insulators and correspond to monolayers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4dc6cb324062d725c6432f4fe51be865
https://repositorio.ufu.br/handle/123456789/15668
https://repositorio.ufu.br/handle/123456789/15668
Autor:
Pimentel, Luísa Madail
Publikováno v:
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Submitted by Cristina Santos (cmaria@ua.pt) on 2019-01-28T14:30:26Z No. of bitstreams: 1 Documento.pdf: 13257292 bytes, checksum: da81c51f16ffcd5ce0f556607190995e (MD5) Made available in DSpace on 2019-01-28T14:30:26Z (GMT). No. of bitstreams: 1 Docu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::d9c6a2cf149d0597529f0352b2ea5413
Autor:
Anversa, Jonas
Publikováno v:
Repositório Institucional da UFSMUniversidade Federal de Santa MariaUFSM.
Conselho Nacional de Desenvolvimento Científico e Tecnológico
The observation of the quantum spin Hall effect in the HgTe/CdTe heterostructure triggered the study of materials exhibiting a spin polarized electronic current at their surfaces/ i
The observation of the quantum spin Hall effect in the HgTe/CdTe heterostructure triggered the study of materials exhibiting a spin polarized electronic current at their surfaces/ i
Externí odkaz:
http://repositorio.ufsm.br/handle/1/3927
Autor:
Anversa, Jonas
Publikováno v:
Biblioteca Digital de Teses e Dissertações do UFSM
Universidade Federal de Santa Maria (UFSM)
instacron:UFSM
Universidade Federal de Santa Maria (UFSM)
instacron:UFSM
Conselho Nacional de Desenvolvimento Científico e Tecnológico The observation of the quantum spin Hall effect in the HgTe/CdTe heterostructure triggered the study of materials exhibiting a spin polarized electronic current at their surfaces/ interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3056::62201d16c9068535fb2c07ded24a1699
http://repositorio.ufsm.br/handle/1/3927
http://repositorio.ufsm.br/handle/1/3927
Autor:
Augusto de Lelis Araújo
Publikováno v:
Repositório Institucional da UFU
Universidade Federal de Uberlândia (UFU)
instacron:UFU
Universidade Federal de Uberlândia (UFU)
instacron:UFU
CAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior O principal objetivo deste trabalho é investigar propriedades estruturais, eletrônicas e topológicas de uma nova classe de materiais denominada Isolantes Cristalinos Topológi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af224578069b5d8ec217284237886fc8
https://repositorio.ufu.br/handle/123456789/22150
https://repositorio.ufu.br/handle/123456789/22150
Autor:
Carlos Augusto Mera Acosta
Publikováno v:
Biblioteca Digital de Teses e Dissertações da USP
Universidade de São Paulo (USP)
instacron:USP
Universidade de São Paulo (USP)
instacron:USP
O principal objetivo da spintrÖnica Ä entender os mecanismos que permitem controlar de forma eficiente tanto a configuraìïo de spin quanto as correntes de spin, orientando ao uso do grau de liberdade do spin como o elemento bçsico de dispositivo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00872ee8796e8b4c437888762b12600e