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pro vyhledávání: '"Essam, Mina"'
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Publikováno v:
Cardiovascular Engineering & Technology; Jun2022, Vol. 13 Issue 3, p393-406, 14p
Publikováno v:
Microwave and Optical Technology Letters. 52:673-677
A two-state single turn spiral inductor design is simulated in a 130 nm technology and another design is simulated and measured in a 45 nm technology. Measurements show an 80% inductance increase at 20 GHz in the 45 nm technology and a simulated 76%
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e07e5efc4ae489060ab65b2b6782144
https://doi.org/10.1002/mop.24985
https://doi.org/10.1002/mop.24985
Autor:
Essam Mina, Saikat Sarkar, Wayne H. Woods, B. Dufrene, Rajarshi Mukhopadhyay, Chang-Ho Lee, R.J. Pratap, Joy Laskar, P. Sen
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 54:2604-2614
This paper reports an interconnect modeling approach for RF and millimeter-wave integrated circuits (ICs) using neural network models and a novel parasitic extraction verification procedure using automatically generated test structures. The effects o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89abf3d81f940fb9acaecde3c1cb4192
https://doi.org/10.1109/tmtt.2006.872926
https://doi.org/10.1109/tmtt.2006.872926
Publikováno v:
Microwave and Optical Technology Letters. 53:664-666
In this article, the design and measurement of a 77-GHz Marchand balun matched to 50 Ω single-ended and 100 Ω differential-ends using multiple metal layers in silicon technology is discussed. The balun is measured with an insertion loss of 1.8 dB a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de955ad2db9c5e828c1ccff4f407e3ad
https://doi.org/10.1002/mop.25756
https://doi.org/10.1002/mop.25756
Publikováno v:
2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2013).
This paper presents wideband circuit level compact models of through-silicon via (TSV) multi-signal connections within an array. The models were developed for time and frequency domain characterization of periodic TSV array patterns, including crosst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34b4af3bbf1101861437ffe7b62eee82
https://doi.org/10.1109/comcas.2013.6685260
https://doi.org/10.1109/comcas.2013.6685260
Publikováno v:
2011 IEEE 61st Electronic Components and Technology Conference (ECTC).
Slow wave coplanar waveguide structures have been designed and implemented with the 3D steps; include alternating high and low impedance sections. The high impedance section is built with a narrow (w1), thin (t1) short (s) line and designed to have l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0b94ba7fe2d18ca68e121d43e0c541e
https://doi.org/10.1109/ectc.2011.5898639
https://doi.org/10.1109/ectc.2011.5898639
Autor:
Cole E. Zemke, Pinping Sun, Wayne H. Woods, Essam Mina, Barbara S. Dewitt, Nick Perez, Hailing Wang
Publikováno v:
ISQED
This paper presents a novel automated post-layout flow validation tool to intensively test the MOSFETs and passive components in 32nm, 28nm and 22nm Process Design Kits (PDK). Benchmark circuits, such as, ring oscillator, logic circuits and passive d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5822c240b084a3b47b2d1cd149a028e3
https://doi.org/10.1109/isqed.2011.5770769
https://doi.org/10.1109/isqed.2011.5770769
Publikováno v:
2010 IEEE MTT-S International Microwave Symposium.
Analysis of PIN diode's geometric effects on the performance of RF switches is presented with measured data. The impact of periphery-to-area ratio (P/A) is investigated in terms of forward bias resistance and linearity. Theoretical analysis shows the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e9085b8fe53e0bcba24b5c80268b3fb
https://doi.org/10.1109/mwsym.2010.5518266
https://doi.org/10.1109/mwsym.2010.5518266
Publikováno v:
2009 59th Electronic Components and Technology Conference.
In this paper, a novel on chip slow wave structure is developed. It is built with discontinuous microstrip steps, the discontinuous line is made by placing a wide and short line and a narrow and short line in turn and the step discontinuity provides
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73d519097362170df2afbbcb41be75c1
https://doi.org/10.1109/ectc.2009.5074229
https://doi.org/10.1109/ectc.2009.5074229