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pro vyhledávání: '"Esra Erbilen Tanrıkulu"'
This study focused on the complex dielectric-constant (ε* = ε′-jε''), complex electrical-modulus (M* = Μ'+ Μ''), and ac electrical-conductivity (σac) of MS diodes with (Ag:ZnO)-PVP interlayer and the dependence of these parameters on frequenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::526646be1eeaab24366c31213db762d2
https://avesis.gazi.edu.tr/publication/details/6c779664-de07-491a-8ed5-4e838dcce8d7/oai
https://avesis.gazi.edu.tr/publication/details/6c779664-de07-491a-8ed5-4e838dcce8d7/oai
Autor:
Esra Erbilen Tanrıkulu, Buket Akın
Publikováno v:
Journal of Electronic Materials. 51:4437-4445
To investigate the capacitance and conductance characteristics of the Au/ZnO/n-GaAs (MIS) structures, impedance measurements were conducted at 200 kHz and 2 MHz frequency zones at ambient temperature. The experimental findings demonstrate that both t
Autor:
Esra Erbilen Tanrıkulu
Publikováno v:
Journal of Materials Science: Materials in Electronics. 34
© 2023, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.Here, the effects of PVC and carbon-nanotube (CNT)-doped PVC interlayers on the electrical and dielectric properties of Au/(n-Si) Schottk
Autor:
Esra Erbilen Tanrıkulu
Variation in the electrical parameters depending on illumination and the formation of negative capacitance (NC), and inductive behavior (IB) of Schottky structures interlaid with Zn:PVA, were executed by current/impedance-voltage (I/Z-V) measurements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e008e3ecf1df739bcb86fab9a03622e0
https://avesis.gazi.edu.tr/publication/details/825ea440-0c29-4c99-8190-2098e9a2be6e/oai
https://avesis.gazi.edu.tr/publication/details/825ea440-0c29-4c99-8190-2098e9a2be6e/oai
Autor:
Esra Erbilen Tanrıkulu
Publikováno v:
Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi. 9:1359-1366
The voltage dependent surface states/traps (Nss) and their relaxation time () of the Al/CdZnO/p-Si (MIS) structure were investigated with admittance method using C-V-f and G/-V-f measurements in the frequency range of 5 kHz-1 MHz. Both the valu