Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Eslam, Abubakr"'
Autor:
Eslam Abubakr, Shinya Ohmagari, Abdelrahman Zkria, Hiroshi Ikenoue, Julien Pernot, Tsuyoshi Yoshitake
Publikováno v:
Materials Research Letters, Vol 10, Iss 10, Pp 666-674 (2022)
We report the fabrication of p-n+ diamond homojunction through an innovative approach of laser irradiation in liquid-ambient. A shallow phosphorus-doped layer with a high electric conductivity is processed on top of a p-type diamond substrate to form
Externí odkaz:
https://doaj.org/article/d000384cc95d46418d82516a5c4c3d7d
Autor:
Sreenath Mylo Valappil, Shinya Ohmagari, Abdelrahman Zkria, Phongsaphak Sittimart, Eslam Abubakr, Hiromitsu Kato, Tsuyoshi Yoshitake
Publikováno v:
AIP Advances, Vol 12, Iss 8, Pp 085007-085007-6 (2022)
n-Type (phosphorus-doped) diamond is a promising material for diamond-based electronic devices. However, realizing good ohmic contacts for phosphorus-doped diamonds limits their applications. Thus, the search for non-conventional ohmic contacts has b
Externí odkaz:
https://doaj.org/article/416a543b8d924e6fa6ed3545ccedc528
Autor:
Abdelrahman Zkria, Hiroki Gima, Eslam Abubakr, Ashraf Mahmoud, Ariful Haque, Tsuyoshi Yoshitake
Publikováno v:
Nanomaterials, Vol 12, Iss 5, p 854 (2022)
Diamond is one of the fascinating films appropriate for optoelectronic applications due to its wide bandgap (5.45 eV), high thermal conductivity (3320 W m−1·K−1), and strong chemical stability. In this report, we synthesized a type of diamond fi
Externí odkaz:
https://doaj.org/article/f67fd9af9e3f4273a7a7a8df06742f70
Autor:
Abdelrahman Zkria, Hiroshi Ikenoue, Shinya Ohmagari, Yū Ki Katamune, Eslam Abubakr, Tsuyoshi Yoshitake
Publikováno v:
ACS Applied Materials & Interfaces. 12:57619-57626
A laser-induced doping method was employed to incorporate phosphorus into an insulating monocrystalline diamond at ambient temperature and pressure conditions. Pulsed laser beams with nanosecond duration (20 ns) were irradiated on the diamond substra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d454b649f38520f878a9c46eeef402ca
https://doi.org/10.1021/acsami.0c18435
https://doi.org/10.1021/acsami.0c18435
Autor:
Tsuyoshi Yoshitake, Ali Mohamed Ali, Phongsaphak Sittimart, Peerasil Charoenyuenyao, Rawiwan Chaleawpong, Nathaporn Promros, Abdelrahman Zkria, Yūki Katamune, Eslam Abubakr, Satoshi Takeichi, Mohamed Egiza
Publikováno v:
Journal of Nanoscience and Nanotechnology. 20:4884-4891
Coaxial arc plasma deposition (CAPD) was employed to manufacture n-type silicon/boron-doped p-type ultrananocrystalline diamond heterojunctions. Measurement and analysis of their dark current density-voltage curve were carried out at room temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4db7b130f0d3cf1335194613233f8f8d
https://doi.org/10.1166/jnn.2020.17838
https://doi.org/10.1166/jnn.2020.17838
Autor:
Eslam Abubakr, Jagdish Narayan, Mohamed Egiza, Ariful Haque, Abdelrahman Zkria, Koki Murasawa, Tsuyoshi Yoshitake
Publikováno v:
MRS Communications. 9:910-915
We report on the structural evolution of diamond-like carbon (DLC) films by the nanosecond pulsed laser annealing process. DLC film is coated on cemented carbide (WC-Co) by cathodic arc ion plating, which is then annealed by ArF laser (193 nm, 20 ns)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9eb26c802b4eb0c40d2c5bac9e69f1e5
https://doi.org/10.1557/mrc.2019.88
https://doi.org/10.1557/mrc.2019.88
Autor:
Abdelrahman Zkria, Shinya Ohmagari, Yūki Katamune, Tsuyoshi Yoshitake, Eslam Abubakr, Hiroshi Ikenoue, Kaname Imokawa
Publikováno v:
Diamond and Related Materials. 95:166-173
A singlecrystalline diamond (100)(Ib) plate immersed in 2% boric acid was irradiated by 193-nm ArF excimer laser beams for the formation of conductive layers on the surface of an insulating diamond substrate. From current-voltage measurements of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::001afe1aa3d5de3c57a29c2db06e856b
https://doi.org/10.1016/j.diamond.2019.04.013
https://doi.org/10.1016/j.diamond.2019.04.013
Publikováno v:
Materials Science in Semiconductor Processing. 139:106370
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4839251d48dc04f3bbfeb115d18562b
https://doi.org/10.1016/j.mssp.2021.106370
https://doi.org/10.1016/j.mssp.2021.106370
Autor:
Rawiwan, Chaleawpong, Nathaporn, Promros, Peerasil, Charoenyuenyao, Phongsaphak, Sittimart, Satoshi, Takeichi, Yūki, Katamune, Abdelrahman, Zkria, Eslam, Abubakr, Mohamed, Egiza, Ali Mohamed, Ali, Tsuyoshi, Yoshitake
Publikováno v:
Journal of nanoscience and nanotechnology. 20(8)
Coaxial arc plasma deposition (CAPD) was employed to manufacture n-type silicon/boron-doped p-type ultrananocrystalline diamond heterojunctions. Measurement and analysis of their dark current density-voltage curve were carried out at room temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::0b69efc3f83ebbbdcda68989b34b0e7a
https://pubmed.ncbi.nlm.nih.gov/32126670
https://pubmed.ncbi.nlm.nih.gov/32126670
Publikováno v:
Journal of Nanomaterials, Vol 2020 (2020)
Diamond films are candidate for a wide range of applications, due to their wide band gap, high thermal conductivity, and chemical stability. In this report, diamond-based heterojunction diodes (HJDs) were fabricated by growing n-type nanocarbon compo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b7ef250037dd4e363e78ecb960666432
https://doaj.org/article/e1a77261a30344159a4df24b81f32aef
https://doaj.org/article/e1a77261a30344159a4df24b81f32aef