Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Esa Tarvainen"'
Autor:
Pekka Kuivalainen, Esa Tarvainen, Hannu Kattelus, Mikael Andersson, Tarja Riihisaari, Hannu Ronkainen
Publikováno v:
Ronkainen, H, Kattelus, H, Tarvainen, E, Riihisaari, T, Andersson, M & Kuivalainen, P 1997, ' IC compatible planar inductors on silicon ', IEE Proceedings G: Circuits, Devices and Systems, vol. 144, no. 1, pp. 29-35 . https://doi.org/10.1049/ip-cds:19970748
The authors present a systematic study of the modelling, design, and fabrication of planar spiral inductors implemented in a high speed 0.8 µm BiCMOS technology, and characterised for use in portable VHF applications. Both a fully empirical distribu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be3908308bccc3f38b66522da8dedd5e
https://cris.vtt.fi/en/publications/d5566ee2-5bda-40d7-9a7d-4410fe5049df
https://cris.vtt.fi/en/publications/d5566ee2-5bda-40d7-9a7d-4410fe5049df
Publikováno v:
Tarvainen, E, Ronkainen, H, Kattelus, H, Riihisaari, T & Kuivalainen, P 1997, ' Planar inductors on silicon for integrated RF circuits ', Physica Scripta, vol. T69, pp. 295-297 . https://doi.org/10.1088/0031-8949/1997/T69/062
We have studied the fabrication and modelling of integrated planar inductors on silicon made by using a standard 0.8 μm BiCMOS process. In order to aid the design of circuits including integrated inductors we have developed and tested a semiempirica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9c89061795bf8a2a89ed3ea3191cc6e
https://doi.org/10.1088/0031-8949/1997/t69/062
https://doi.org/10.1088/0031-8949/1997/t69/062
Publikováno v:
Kuivalainen, P, Tarvainen, E, Ronkainen, H, Majamaa, T & Hovinen, A 1997, ' Model for the cutoff frequency in RF MOSFETs ', Physica Scripta, vol. T69, pp. 193-195 . https://doi.org/10.1088/0031-8949/1997/T69/038
We present a simple analytical model for the drain current dependent cutoff frequency fT in submicron high frequency MOSFET's. The model combines the SPICE MOS3 drain current model and a modified McMacken-Chamberlain model for the current dependent t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb66992246bc3a92891ba981dab9fa7d
https://cris.vtt.fi/en/publications/8c0bdf44-91d4-4af8-8b4f-c6c1fafb6d1a
https://cris.vtt.fi/en/publications/8c0bdf44-91d4-4af8-8b4f-c6c1fafb6d1a
Publikováno v:
Riihisaari, T, Kattelus, H & Tarvainen, E 1997, ' Process alternatives for manufacturing integrated inductors ', Physica Scripta: Topical Issues, vol. T69, pp. 273-275 . https://doi.org/10.1088/0031-8949/1997/T69/057
New interest has recently arisen on inductors integrated monolithically together with CMOS electronics. The reason for the current attention lies in the demand for higher level of integration and increased operation frequency. Earlier efforts to make
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::605bea9fbbc0e4d088e288068bc02617
https://cris.vtt.fi/en/publications/df3ccaa3-573a-4b94-bbc4-a1ea832ce9af
https://cris.vtt.fi/en/publications/df3ccaa3-573a-4b94-bbc4-a1ea832ce9af