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pro vyhledávání: '"Eryan Gu"'
Autor:
Yicheng Li, Zilian Qi, Yuxiao Lan, Kun Cao, Yanwei Wen, Jingming Zhang, Eryan Gu, Junzhou Long, Jin Yan, Bin Shan, Rong Chen
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-10 (2023)
Abstract Atomic-scale precision alignment is a bottleneck in the fabrication of next-generation nanoelectronics. In this study, a redox-coupled inherently selective atomic layer deposition (ALD) is introduced to tackle this challenge. The ‘reductio
Externí odkaz:
https://doaj.org/article/2684896bbc114e298d0102939b5534bd
Publikováno v:
Journal of Alloys and Compounds. 914:165339