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pro vyhledávání: '"Erwin Dipl Phys Dr Hammerl"'
Publikováno v:
Journal of The Electrochemical Society. 144:4022-4026
The oxidation enhanced diffusion (OED) of boron and diffusion as well as recombination of interstitials on silicon-on-insulator (SOI) material have been studied in periodically boron-doped silicon. Bonded wafers (BESOI UNIBOND) as well as oxygen-impl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84f9efb906b9618925b0b9a7ce4a3fd1
https://doi.org/10.1149/1.1838129
https://doi.org/10.1149/1.1838129
