Zobrazeno 1 - 10
of 723
pro vyhledávání: '"Erwin, A C"'
Autor:
Pham, Van Dong, Pan, Yi, Erwin, Steven C., von Oppen, Felix, Kanisawa, Kiyoshi, Fölsch, Stefan
Atom manipulation by scanning tunneling microscopy was used to construct quantum dots on the InAs(111)A surface. Each dot comprised six ionized indium adatoms. The positively charged adatoms create a confining potential acting on surface-state electr
Externí odkaz:
http://arxiv.org/abs/2406.13347
Cryogenic scanning tunneling microscopy was employed in combination with density-functional theory calculations to explore quantum dots made of In adatoms on the InAs(110) surface. Each adatom adsorbs at a surface site coordinated by one cation and t
Externí odkaz:
http://arxiv.org/abs/2311.11848
Autor:
Pham, Van Dong, Pan, Yi, Erwin, Steven C., von Oppen, Felix, Kanisawa, Kiyoshi, Fölsch, Stefan
Topological electronic phases exist in a variety of naturally occurring materials but can also be created artificially. We used a cryogenic scanning tunneling microscope to create dimerized chains of identical quantum dots on a semiconductor surface
Externí odkaz:
http://arxiv.org/abs/2112.00801
Autor:
Helm-Murtagh, Susan C. susan.helm-murtagh@unc.edu, Erwin, Paul C.
Publikováno v:
American Journal of Public Health. Jun2024, Vol. 114 Issue 6, p626-632. 7p.
Autor:
Brownson, Ross C. rbrownson@wustl.edu, Erwin, Paul C.
Publikováno v:
American Journal of Public Health. May2024, Vol. 114 Issue 5, p479-485. 7p.
Akademický článek
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Publikováno v:
Phys. Rev. Lett. 124, 016102 (2020)
The self-assembly of submonolayer amounts of Au on the densely stepped Si(553) surface creates an array of closely spaced \atomic wires" separated by 1.5 nm. At low temperature, charge transfer between the terraces and the row of silicon dangling bon
Externí odkaz:
http://arxiv.org/abs/1911.11518
Autor:
Jenichen, B, Herfort, J, Hanke, M, Jahn, U, Kong, X, Dau, M T, Trampert, A, Kirmse, H, Erwin, S C
Publikováno v:
J. Appl. Phys. 120, 225304 (2016)
Co$_{2}$TiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray diffraction was combined with lattice parameter calculations by density f
Externí odkaz:
http://arxiv.org/abs/1907.05238
Autor:
Jenichen, B, Hanke, M, Gaucher, S, Trampert, A, Herfort, J, Kirmse, H, Haas, B, Willinger, E, Huang, X, Erwin, S C
Publikováno v:
Physical Review Materials 2, 051402(R) (2018)
Fe$_{3}$Si/Ge(Fe,Si)/Fe$_{3}$Si thin film stacks were grown by a combination of molecular beam epitaxy and solid phase epitaxy (Ge on Fe$_{3}$Si). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron X-ray diffrac
Externí odkaz:
http://arxiv.org/abs/1907.05189
Autor:
Kasman, Matt, Hammond, Ross A., Purcell, Rob, Saliba, Louise Farah, Mazzucca-Ragan, Stephanie, Padek, Margaret, Allen, Peg, Luke, Douglas A., Moreland-Russell, Sarah, Erwin, Paul C., Brownson, Ross C.
Publikováno v:
In American Journal of Preventive Medicine April 2023 64(4):525-534