Potential of hydrogenated microcrystalline silicon-germanium for low thermal budget near infrared sensors

Autor: Alestair Wilson, Erwann Fourmond, Bilel Saidi, Jean-Gabriel Mattei, Benjamin Fornacciari, Mickael Gros-Jean

Publikováno v: Physics and Simulation of Optoelectronic Devices XXXI.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d85eeff0ee1dfaa25763cd894ffd4051
https://doi.org/10.1117/12.2647554

Understanding of the influence of localized surface defectivity properties on the performances of silicon heterojunction cells

Autor: Erwann Fourmond, Jordi Veirman, Renaud Varache, Valentin Giglia

Publikováno v: Progress in Photovoltaics
Progress in Photovoltaics, Wiley, 2020, ⟨10.1002/pip.3330⟩
Progress in Photovoltaics, 2020, 28, pp.1333-1344. ⟨10.1002/pip.3330⟩

International audience; The industrial fabrication process of silicon heterojunction (SHJ) solar cells can induce locally depassivated regions (so-called defectivity) because of transportation steps (contact with belts, trays, etc.) or simply the env

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d6ec78d998b6badeee6f1293fff90e52
https://doi.org/10.1002/pip.3330

Electroluminescence analysis of silicon interdigitated back contact solar cells with a front surface selective band offset barrier

Autor: Koffi F. Ahanogbe, José Alvarez, Alexandre Jaffré, James P. Connolly, Marie-Estelle Gueunier-Farret, Erwann Fourmond, Seif El-Whibi, Alain Fave, Perrine Carroy, Zakaria Djebbour, Jean-Paul Kleider

Publikováno v: EPJ Photovoltaics
EPJ Photovoltaics, 2022, Recent Advances in Spectroscopy and Microscopy of Thin-films Materials, Interfaces, and Solar Cells 2021', 13, pp.16. ⟨10.1051/epjpv/2022015⟩

International audience; Electroluminescence allows rapid characterization of an entire photovoltaic solar cell and visualization of defects at the micrometer scale. Here we focus on the optoelectronic properties of silicon interdigitated back contact

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd5d6286bb809ee609bcb5d4ba13903a
https://doi.org/10.1051/epjpv/2022015

Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells

Autor: Julien Degoulange, Giuseppe Galbiati, Andres Cuevas, Roland Einhaus, Maxime Forster, Erwann Fourmond, Fiacre Rougieux, Pierre Wagner

Publikováno v: Solar Energy Materials and Solar Cells. 120:390-395

This paper deals with the impact of dopant compensation on the degradation of carrier lifetime and solar cells performance due to the boron–oxygen defect. The boron–oxygen defect density evaluated by lifetime measurements before and after degrada

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f6aa5057947a6fd033e0265c66085f05
https://doi.org/10.1016/j.solmat.2013.06.014

Compensation engineering for uniform n-type silicon ingots

Autor: Antoine Thomas, Bastien Dehestru, Mustapha Lemiti, Roland Einhaus, Erwann Fourmond, Maxime Forster, Andres Cuevas

Publikováno v: Solar Energy Materials and Solar Cells
Solar Energy Materials and Solar Cells, Elsevier, 2013, 111, pp.146-152. ⟨10.1016/j.solmat.2013.01.001⟩

International audience; This paper addresses a major issue related to the use of upgraded-metallurgical grade silicon for n-type solar cells. We show that n-type silicon ingots, grown from silicon feedstock containing both boron and phosphorus, displ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d8cb46fdee9f718b5b4e073ce861cda
https://doi.org/10.1016/j.solmat.2013.01.001