Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Erwan Le Roy"'
Publikováno v:
2015 10th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT).
2.5D and 3D packaging continues to be a popular topic within the semiconductor industry. Several announcements have shown signs of adoption for the new packaging technology, especially for stacked DRAMi. The reveal of the Through Silicon Via (TSV) is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fba33dd3980bd09ecea48f785d552a8c
https://doi.org/10.1109/impact.2015.7365257
https://doi.org/10.1109/impact.2015.7365257
Publikováno v:
International Symposium for Testing and Failure Analysis.
An n-well contrast enhancement process, which is used for backside navigation has been further developed to observe dopant regions on top-down prepared devices. Dopant regions for the following structures were delineated: ▪ p-active regions in n-we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35d6e920097e4d4586191d988d4a1775
https://doi.org/10.31399/asm.cp.istfa2005p0008
https://doi.org/10.31399/asm.cp.istfa2005p0008
Publikováno v:
International Symposium for Testing and Failure Analysis.
Voltage contrast like imaging of n-wells in a grounded psubstrate is presented as a new method for assisting FIB microsurgery from the backside of the die. The initial, transient contrast is used for endpointing in the trenching process. It is made p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec39c710e78a3a2447ac82dbaef73cd0
https://doi.org/10.31399/asm.cp.istfa2003p0331
https://doi.org/10.31399/asm.cp.istfa2003p0331
Autor:
Mark E. Thompson, Erwan Le Roy
Publikováno v:
MRS Proceedings. 792
Using a focused ion beam (FIB), secondary electron (SE) imaging of n-wells under oxide from the backside of thinned integrated circuits without electrical bias was accomplished. From the backside, the n-wells were initially observed at a remaining si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e39fb3acaefa020edc7ccec0af202164
https://doi.org/10.1557/proc-792-r10.9
https://doi.org/10.1557/proc-792-r10.9