Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Erum Jamil"'
Publikováno v:
International Journal of Photoenergy, Vol 2018 (2018)
The energy scenario today is focused on the development and usage of solar cells, especially in the paradigm of clean energy. To readily create electron and hole pairs, solar cells utilize either photoactive or photosensitive components. A bulk heter
Externí odkaz:
https://doaj.org/article/3aeea63b6f714f4b934915a9f4f03841
Autor:
Mia I. Baca, Shruti I. Gharde, Adreanna G. Rael, Mark V. Reymatias, Erum Jamil, Gennady A. Smolyakov, Sergei A. Ivanov, Winson C. H. Kuo, John D. Watt, Dale L. Huber, Marek Osinski
Publikováno v:
Colloidal Nanoparticles for Biomedical Applications XVIII.
Publikováno v:
Silicon. 14:10313-10325
Publikováno v:
IEEE Transactions on Electron Devices. 65:610-614
It has been known that McIntyre’s local multiplication theory for avalanche photodiodes (APDs) does not fully explain the experimental results for single-carrier InAs APDs, which exhibit excess noise factor values below 2. While it has been establi
Publikováno v:
2019 International Conference on Electrical, Communication, and Computer Engineering (ICECCE).
The trend within the society to produce waste materials has increased with improvement in the standard of living. This is clearly visible in the technology realm, especially when dealing with electronics. In recent times, the increase in the usage of
Publikováno v:
The European Physical Journal Applied Physics. 93:10503
The demand for miniaturization of electronic devices has lent to the development of graphene-based hybrid structures, which include the Metal-Semiconductor-Metal (MSM) device. In this work, one has developed such a device by growing monolayers of gra
Publikováno v:
SPIE Proceedings.
Si-Ge lateral avalanche photodiodes (Si-Ge LAPDs) are promising devices for single photon detection, but they also have technology challenges. Si-Ge LAPDs are CMOS compatible and capable of detecting photons near the 1550 nm telecommunications bands.
Publikováno v:
Optics Express. 24:21597
Simple, approximate formulas are developed to calculate the mean gain and excess noise factor for avalanche photodiodes using the dead-space multiplication theory in the regime of small multiplication width and high applied electric field. The accura