Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Ernst Haugeneder"'
Autor:
Ivo W. Rangelow, W. Fallman, Ernst Haugeneder, Hans Loschner, Tibor Lalinský, M. Drık, P. Hudek, Y. Sarov, J. Chlpık
Publikováno v:
Microelectronic Engineering. 83:1036-1042
The tools of optical measurement of deformation are increasingly used to characterize both the mechanical and the thermal properties of MEMS components and especially membranes. In the paper the application of optical methods for membranes tension me
Autor:
Christoph Brandstaetter, Ernst Haugeneder, Stefan Eder-Kapl, Hans-Joachim Doering, Helmut Langfischer, Martin Witt, Joerg Eichholz, Joachim Heinitz, Klaus Reimer
Publikováno v:
Microelectronic Engineering. 83:968-971
A proof-of-concept multi beam blanking device (''blanking demonstrator'') has been fabricated for the projection mask-less lithography project. It comprises a Si chip with approx. 4000 openings (each has a size of 8x8@mm^2) etched through with adjace
Autor:
Ernst Haugeneder, Frank-Michael Kamm, Reinhard Springer, Werner Pamler, Herbert Schäfer, Jörg Butschke, Hans Loschner, Albrecht Ehrmann, Rainer Käsmaier
Publikováno v:
Japanese Journal of Applied Physics. 41:4146-4149
The issue of placement control is one of the key challenges of stencil mask technology. A high placement accuracy can only be achieved with a precise control of mechanical stress on a global and local scale. For this reason, the stress properties of
Publikováno v:
Journal of Applied Crystallography. 35:17-20
For the measurement of the strain distribution in single-crystalline thin layers, it is in principle enough to measure the shift of the angular position of a single Bragg reflection. This is usually disturbed by the curvature of the specimen. Because
Autor:
Roxann L. Engelstad, R. Tejeda, Hans Loschner, Edward G. Lovell, Gary A. Frisque, Ernst Haugeneder
Publikováno v:
Microelectronic Engineering. 46:485-488
Fabrication of low distortion stencil masks is one of the key issues for ion-beam projection lithography (IPL). Identifying the sources of distortion and optimizing the processing techniques are essentical to meet the stringent error budgets. Since e
Publikováno v:
Microelectronic Engineering. 46:481-484
Next Generation Lithography (NGL) will require masks with high resolution and positioning accuracy to meet the requirements for sub-0.13 @mm technology. This paper focuses on the design and development of low distortion stencil masks for ion-beam pro
Autor:
Ernst Haugeneder, Maati Talmi, Juergen Saniter, Juergen Eindorf, Alexander Reisig, Sven-Hendrik Voss, Joachim Heinitz
Advantageous optical interconnect technology was chosen for the projection mask-less lithography application to transmit the exposure data to the blanking plate electronics inside a high-voltage vacuum area. Ensuring continuous and reliable operation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::12db0b36577ce66669e5a5e35b0e711c
https://publica.fraunhofer.de/handle/publica/211452
https://publica.fraunhofer.de/handle/publica/211452
Autor:
Maati Talmi, Peter Jochl, Thomas Elster, Ramona Eberhardt, Ernst Haugeneder, Stefan Eder-Kapl, Hans-Joachim Doering, Olaf Fortagne, Juergen Saniter, Klaus Reimer, Joachim Heinitz, Gertraud Lammer, Klaus Kroenert, Christoph Brandstaetter, Hans Loeschner
Publikováno v:
SPIE Proceedings.
Electron beam based Projection Mask-Less Lithography (PML2) is one of the promising candidates for fast chip devel-opment and prototyping as well as for small and medium volume device production for the 45nm technology node and beyond. The concept of
Autor:
Hans-Joachim Doering, Olaf Fortagne, Juergen Saniter, Thomas Elster, Gertraud Lammer, Joerg Eichholz, Ernst Haugeneder, Klaus Reimer, Joachim Heinitz, Stefan Eder-Kapl, Christoph Brandstaetter, Hans Loeschner
Publikováno v:
SPIE Proceedings.
Electron beam based Projection Mask-Less Lithography (PML2) is one of the promising candidates for small and medium volume device production for the 45nm technology node and beyond. The concept of the PML2 proof-of-concept tool, to be realized as par
Autor:
T Lammer, Albrecht Ehrmann, Reinhard Springer, Rainer Kaesmaier, A. Chalupka, Joerg Butschke, Ernst Haugeneder, Florian Letzkus, Frank-Michael Kamm, Hans Loeschner, Mathias Irmscher, Thomas Struck, Andreas Wolter
Publikováno v:
SPIE Proceedings.
From detailed comparisons of stencil mask distortion measurements with Finite Element (FE) analyses the parameters of influence are well known. Most of them are under control of the mask manufacturer, such as the membrane stress level and the etching