Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Ernie Schirmann"'
Autor:
Jenn-Hwa Huang, M. Durlam, Ernie Schirmann, Saied N. Tehrani, Marino J. Martinez, Nyles W. Cody
Publikováno v:
Thin Solid Films. :493-496
NiGeW has been successfully implemented as a contact material on GaAs MESFETs in a production environment. However, when identical contacts were used on heterostructure field effect transistors (HFETs), a strong interaction was observed between NiGeW
Autor:
Marino J. Martinez, Ernie Schirmann, K. Barkley, Saied N. Tehrani, T. Driver, Nyles W. Cody, Jenn-Hwa Huang, M. Durlam
Publikováno v:
1996 IEEE MTT-S International Microwave Symposium Digest.
Power Pseudomorphic High Electron Mobility Transistors (P-HEMTs) with unprecedented efficiency are being produced for low-voltage portable wireless products. 12 mm devices operating at 3.5 V achieve more than 75% power added efficiency, 1.5 W output
Publikováno v:
41st ARFTG Conference Digest.
An automated microwave characterization system has been developed to support process development, process control, and statistical design activities within a GaAs IC production facility. The system utilizes direct parameter extraction techniques in o