Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Ernest Brzozowski"'
Autor:
Ernest Brzozowski, Maciej Kaminski, Andrzej Taube, Oskar Sadowski, Krystian Krol, Marek Guziewicz
Publikováno v:
Materials, Vol 16, Iss 12, p 4381 (2023)
The electrical and physical properties of the SiC/SiO2 interfaces are critical for the reliability and performance of SiC-based MOSFETs. Optimizing the oxidation and post-oxidation processes is the most promising method of improving oxide quality, ch
Externí odkaz:
https://doaj.org/article/a76ec9e34bc54cb8bca0699a208348e6
Autor:
Guziewicz, Ernest Brzozowski, Maciej Kaminski, Andrzej Taube, Oskar Sadowski, Krystian Krol, Marek
Publikováno v:
Materials; Volume 16; Issue 12; Pages: 4381
The electrical and physical properties of the SiC/SiO2 interfaces are critical for the reliability and performance of SiC-based MOSFETs. Optimizing the oxidation and post-oxidation processes is the most promising method of improving oxide quality, ch
Autor:
Ernest Brzozowski
Publikováno v:
PRZEGLĄD ELEKTROTECHNICZNY. 1:119-123
Autor:
Ernest Brzozowski, Paweł Górecki, Krzysztof Górecki, Marek Guziewicz, Ryszard Kisiel, Jan Bar
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 11:1988-1996
This article presents the results of investigations illustrating the influence of the method of assembling the die of the insulated gate bipolar transistor (IGBT) to the base of the TO-220 lead frame on its thermal parameters. The properties of the t
Autor:
Anna Szerling, Andrzej Taube, Maciej Kaminski, Marek Ekielski, Jarosław Tarenko, Karolina Pągowska, Maciej Kozubal, Kamil Kosiel, Renata Kruszka, Krystyna Golaszewska-Malec, Ernest Brzozowski, Norbert Kwietniewski, Ryszard Kisiel
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Autor:
Ernest Brzozowski
Publikováno v:
Juniper Online Journal Material Science. 6
Autor:
Waldemar Soluch, Ernest Brzozowski
Publikováno v:
IEEE Transactions on Electron Devices. 61:3395-3398
The effect of metal electrodes on surface acoustic wave (SAW) properties in bulk semi-insulating Z-cut GaN crystal was measured for the first time. A SAW synchronous two-port resonator was used for these measurements. Such SAW parameters as velocity,