Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Erming Rui"'
Autor:
Chunhua Qi, Guoliang Ma, Yanqing Zhang, Tianqi Wang, Erming Rui, Qiang Jiao, Chaoming Liu, Mingxue Huo, Guofu Zhai
Publikováno v:
Microelectronics International. 40:89-95
Purpose The purpose of this paper is to present a transition detector (TD)-based radiation hardened flip-flop (TDRH-FF) for single event upset (SEU). Design/methodology/approach With SEU recovery and single event transient (SET) detector mechanism, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb9bc7cc1ac8d85b1bca5a8777b6595b
https://doi.org/10.1108/mi-06-2022-0110
https://doi.org/10.1108/mi-06-2022-0110
Publikováno v:
International Workshop on Automation, Control, and Communication Engineering (IWACCE 2022).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eae081408b61d2a478e493a5d498a3be
https://doi.org/10.1117/12.2662882
https://doi.org/10.1117/12.2662882
Autor:
Shijie Pan, Shiwei Feng, Xuan Li, Kun Bai, Xiaozhuang Lu, Yamin Zhang, Lixing Zhou, Erming Rui, Qiang Jiao, Yu Tian
Publikováno v:
Semiconductor Science and Technology. 37:095017
This paper presents a detailed investigation of trapping effect in AlGaN/GaN high-electron-mobility transistors based on the pulsed current–voltage characterization, drain voltage transient (DVT) measurement, and capacitance deep-level transient sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f5296c5b408c253e668da8c5a7cdd50
https://doi.org/10.1088/1361-6641/ac84fc
https://doi.org/10.1088/1361-6641/ac84fc
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 365:55-60
In this study, mutiwalled carbon nanotubes (MWCNTs) were incorporated into low density polyethylene (LDPE) in different concentrations (2%, 4% and 8%) using a melt blending process. Structural, thermal stability and tensile property of the unirradiat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bd5467869d2c905e064f5a2c97fac85
https://doi.org/10.1016/j.nimb.2015.04.013
https://doi.org/10.1016/j.nimb.2015.04.013
Publikováno v:
Polymer Degradation and Stability. 109:59-70
The deformation mechanisms of low density polyethylene (LDPE) irradiated by 110 keV electrons with different fluences are discussed basing on the deformation behaviors and the structural evolution during uniaxial tensile deformation. The structural e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f50b39a8b0d17a485abc508e9cb946a7
https://doi.org/10.1016/j.polymdegradstab.2014.07.006
https://doi.org/10.1016/j.polymdegradstab.2014.07.006
Publikováno v:
Polymer Composites. 36:278-286
The mechanical properties of low-density polyethylene/multiwalled carbon nanotubes (LDPE/MWCNTs) composites without and with 170 keV proton irradiation were studied by tensile tests. Mechanisms of changes of mechanical properties were examined by mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea7fec4d121e95aff3149a5cc850748e
https://doi.org/10.1002/pc.22941
https://doi.org/10.1002/pc.22941
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 735:198-201
Isochronal anneal sequences have been carried out on 3CG130 silicon PNP bipolar junction transistors (BJTs) irradiated with 20 MeV bromine (Br) heavy ions. The Gummel curve was utilized to characterize the annealing behavior of defects in both the em
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40e6a507058bcb237aa2eac973c5d200
https://doi.org/10.1016/j.nima.2013.09.048
https://doi.org/10.1016/j.nima.2013.09.048
Publikováno v:
Applied Surface Science. 287:172-177
The effects of 170 keV proton irradiation for fluences of 5 × 10 14 cm −2 and 5 × 10 15 cm −2 on surface morphology and structure of multi-walled carbon nanotubes (MWCNTs) film were investigated. The pristine and irradiated MWCNTs films were ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20404b159542fbe0e8f77b195397698f
https://doi.org/10.1016/j.apsusc.2013.09.111
https://doi.org/10.1016/j.apsusc.2013.09.111
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 688:7-10
The characteristic degradation in silicon NPN bipolar junction transistors (BJTs) of 3DG130 type is examined under the irradiation with 35 MeV silicon (Si) ions under forward, grounded and reverse bias conditions, respectively. Different electrical p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::555ed62232c3bca9b342d0c0a4be027b
https://doi.org/10.1016/j.nima.2012.05.073
https://doi.org/10.1016/j.nima.2012.05.073
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 677:61-66
The current gain degradation in silicon bipolar junction transistors (BJTs) is examined under the irradiation with heavy ions. To characterize the radiation damage of the BJTs, the ionizing dose Di and displacement dose Dd verse the chip depth in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::439798ee885d2afd7c62f4b101032bfa
https://doi.org/10.1016/j.nima.2012.02.045
https://doi.org/10.1016/j.nima.2012.02.045