Výsledky vyhledávání - "Erlend G. Rolseth"

Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges

Autor: Torsten Wendav, V.S. Senthil Srinivasan, Inga A. Fischer, Erlend G. Rolseth, Joerg Schulze, Aleksei Kruglov, Andreas Blech, R. Koerner, Kurt Busch, K. Kostecki, Mathias Weiser, Youssef Hashad

Publikováno v: MIPRO

In this paper we report experimental results on the fabrication and characterization of vertical Ge gate-all-around p-channel TFETs, utilizing GeSn as a channel material. Through two sample series, the potential and challenges of implementing the low

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4acf51dd11eb81a1109d38454953956e
https://doi.org/10.23919/mipro.2017.7973391

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X-ray Studies of Carbon Dioxide Intercalation in Na-Fluorohectorite Clay at Near-Ambient Conditions

Autor: Elisabeth Lindbo Hansen, Jon Otto Fossum, Erlend G. Rolseth, Henrik Hemmen, Davi de Miranda Fonseca, Tomás S. Plivelic

Publikováno v: Langmuir

We show experimentally that gaseous CO2 intercalates into the interlayer space of the synthetic smectite clay Na-fluorohectorite at conditions not too far from ambient. The mean interlayer repetition distance of the clay when CO2 is intercalated is f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::725a0e2a31729bf4a79bd0385f8ec02e
http://hdl.handle.net/11250/2463688

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