Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Erkan Nevzat Isa"'
Publikováno v:
2022 IEEE 13th Latin America Symposium on Circuits and System (LASCAS).
Autor:
Erkan Nevzat Isa, Linus Maurer, David Borggreve, Enno Boehme, Harshitha Basavaraju, Frank Vanselow
Publikováno v:
NorCAS
In this work we propose a variant of double-tail latched comparator, designed in 22 nm FDSOI (fully depleted silicon on insulator), operating at 2.88 GHz with supply voltage 0.8 V and achieving input referred offset and rms noise of 2.38 mV (1σ) and
Publikováno v:
Solid-State Electronics. 195:108379
In this work, a wide-band Frequency-Tripler is designed to cover Frequency-Modulated Continuous Wave radar (FMCW) in 22-nm CMOS-FDSOI Technology. The designed frequency Tripler upconverts sub-30 GHz signal to cover a wide-band FMCW spectrum (72–84
In today's connected world, the demand for mobile communications and instant access to information, anytime and anywhere, has drastically changed the electronics landscape, both consumer and industrial. Novel 5G and 6G systems will enable connectivit
Publikováno v:
2020 IEEE Nordic Circuits and Systems Conference (NorCAS)
NorCAS
NorCAS
In this paper, we present the design methodology and measurement results of a low-power, ultra-wide range Voltage Controlled Oscillator (VCO), with frequency range varying from 13. 1-18.4GHz. The design is fabricated in the 22-nm fully depleted Silic
Autor:
Enno Bohme, Pragoti Pran Bora, Jidan Al-Eryani, Erkan Nevzat Isa, Piyush Kumar, Linus Maurer, David Borggreve
Publikováno v:
2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
This paper presents a low power, Voltage-Controlled-Oscillator (VCO) designed with an output frequency range from 21.5 GHz to 24.5 GHz. The VCO is designed in 22 nm fully depleted Silicon-on-Insulator (FDSOI) CMOS technology. The backgate-bias is use
Autor:
Luigi Boccia, Emmanuel Pistono, T. Lim, Philippe Ferrari, Giuseppe Acri, Florence Podevin, Erkan Nevzat Isa, N. Corrao
Publikováno v:
14th European Microwave Integrated Circuits Conference (EuMIC 2019)
14th European Microwave Integrated Circuits Conference (EuMIC 2019), Sep 2019, Paris, France. pp.144-147
14th European Microwave Integrated Circuits Conference (EuMIC 2019), Sep 2019, Paris, France. pp.144-147
International audience; This work presents a comparative study of conventional and slow wave (SW) transmission lines implemented in an advanced 22-nm CMOS process. Both microstrip (MS) and coplanar waveguides (CPW) were analysed through simulations a
Publikováno v:
NEWCAS
We present the design of a low-power 3rd order sigma-delta (ΣΔ) modulator targeted for sensor applications. The circuit is implemented in the 22 nm Fully Depleted Silicon on Insulator (FDSOI) CMOS process technology from GlobalFoundries. The modula
Autor:
Linus Maurer, Enno Bohme, Busra Tas Ulasli, Erkan Nevzat Isa, Jidan Al-Eryani, Piyush Kumar, Frank Vanselow
Publikováno v:
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).
A 10.5 GHz, ultra-low-power, wide frequency tuning range (FTR) of 2.5 GHz, LC-VCO IC is presented in this paper. The designed VCO is integrated with a cascode buffer designed for 50 Ω load impedance. The design is realized with the 22 nm FDSOI CMOS
Publikováno v:
2018 IEEE Applied Power Electronics Conference and Exposition (APEC)
In this paper, we present a novel, piezoelectricactuator driver topology that combines high-voltage actuatordriving in the range of -50 V- to +100 V with piezoelectricreliability. The output waveform is generated by a novelcapacitor clamping circuit