Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Erkan, Cakmak"'
Publikováno v:
Medicine Science, Vol 10, Iss 3, Pp 895-901 (2021)
In this study, we aimed to evaluate the presence and frequency of sarcopenia in chronic kidney disease (CKD) patients under hemodialysis treatment, to analyze socio-demographic and clinical factors that may be associated with sarcopenia and to compar
Externí odkaz:
https://doaj.org/article/968bc7474f9545b59889bfe7321ea207
Publikováno v:
Medicine Science | International Medical Journal. 10:1511
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70487d246bdec90a93f458424140e988
https://doi.org/10.5455/medscience.2021.06.212
https://doi.org/10.5455/medscience.2021.06.212
Publikováno v:
Microsystem Technologies. 16:799-808
Adhesive wafer bonding is a technique that uses an intermediate layer (typically a polymer) for bonding two substrates. The main advantages of using this approach are: low temperature processing (maximum temperatures lower than 400°C), surface plana
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cad0b68cf64b996d27e6f30a687e1e0
https://doi.org/10.1007/s00542-009-0977-0
https://doi.org/10.1007/s00542-009-0977-0
Publikováno v:
JPMA. The Journal of the Pakistan Medical Association. 64(12)
To evaluate the effectiveness and safety of cervical arthroplasty and anterior cervical discectomy fusion methods.The randomised clinical trial was conducted at the neurosurgical clinic of University of Harran, Turkey, between February 2009 and Janua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::09597c4f2f82f1747e3937ef5fe4bcb7
https://pubmed.ncbi.nlm.nih.gov/25842575
https://pubmed.ncbi.nlm.nih.gov/25842575
Publikováno v:
2010 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Cu-Cu direct bonding facilitates fine-pitch interconnection with low electrical resistivity and high electromigration (EM) resistance. However, reliable Cu-Cu bonds result only from high temperature, high pressure and long process time mainly because
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d31dcc8452e94051c74af25d49bb3785
https://doi.org/10.1109/asmc.2010.5551424
https://doi.org/10.1109/asmc.2010.5551424
Publikováno v:
2009 International Semiconductor Conference.
Metal films can be used as bonding layers at wafer-level in MEMS manufacturing processes for device assembly as well as just for electrical integration of different components. One has to distinguish between two categories of processes: metal thermo-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38023204ac03dc24bf8e0c97692db509
https://doi.org/10.1109/smicnd.2009.5336567
https://doi.org/10.1109/smicnd.2009.5336567
Publikováno v:
SPIE Proceedings.
Adhesive wafer bonding is a technique that uses an intermediate layer for bonding (typically a polymer). The main advantages of using this approach are: low temperature processing (maximum temperatures below 400°C), surface planarization and toleran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eba52ff6fa4ab379254cac10a35627ef
https://doi.org/10.1117/12.821725
https://doi.org/10.1117/12.821725
Publikováno v:
MRS Proceedings. 1222
Wafer level bonding is an important technology for the manufacturing of numerous Microelectromechanical Systems. In this work the aluminum thermo-compression wafer bonding is characterized. The effects and significance of various bond process paramet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c37126c69b69e8d6edb77087e9de94fa
https://doi.org/10.1557/proc-1222-dd04-02
https://doi.org/10.1557/proc-1222-dd04-02
Autor:
S.J. Kirk, Sang Min Wong, E. Wang, Erkan Cakmak, L. Archer, J. West, S.A. Henry, Chiu Tse, C. Wu
Publikováno v:
2008 IEEE/SEMI Advanced Semiconductor Manufacturing Conference.
The drive to minimize the RC delay in logic copper/low-K interconnect requires new material strategies, especially for porous low-K films for 45 nm and beyond. Incumbent cleaning offerings leave a gap in unmet needs. This gap has been filled with the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ca2904fc45a8017a221f0445125a060
https://doi.org/10.1109/asmc.2008.4529043
https://doi.org/10.1109/asmc.2008.4529043
Publikováno v:
MRS Proceedings. 1139
Metal layers can be used as bonding layers at wafer-level in MEMS manufacturing processes for device assembly as well as just for electrical integration of different levels. One has to distinguish between two main types of processes: metal diffusion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fea83f688d0d10c6314701f11d3ce316
https://doi.org/10.1557/proc-1139-gg03-33
https://doi.org/10.1557/proc-1139-gg03-33