Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Erin McLellan"'
Autor:
Erin McLellan
When two tornado chasers form a reluctant team, the pressure between them builds…. Human-interest reporter—and son of a famous storm chaser—Guthrie Gale wants nothing to do with severe weather. But his station's director insists he join the sto
Autor:
Jeffrey C. Shearer, Philip J. Oldiges, Soon-Cheon Seo, Terry A. Spooner, Matthew E. Colburn, Ravikumar Ramachandran, V. Sardesai, Kang-ill Seo, Dinesh Gupta, Richard G. Southwick, Xiao Sun, S. Stieg, H. Cai, S. Kanakasabaphthy, Vamsi Paruchuri, R. Sampson, Lars W. Liebmann, Walter Kleemeier, Kisik Choi, Deok-Hyung Lee, Christopher Prindle, R. Divakaruni, H. Shang, Abhijeet Paul, T. Gow, D. McHerron, Dechao Guo, Fee Li Lie, J. Nam, Neeraj Tripathi, Ruilong Xie, R. Kambhampati, Muthumanickam Sankarapandian, Balasubramanian S. Pranatharthi Haran, Carol Boye, James H. Stathis, B. Hamieh, John Iacoponi, Christopher J. Waskiewicz, Geum-Jong Bae, Derrick Liu, Sanjay Mehta, Reinaldo A. Vega, Terence B. Hook, Min Gyu Sung, Jay W. Strane, D.I. Bae, Robin Chao, Hoon Kim, F. Nelson, Theodorus E. Standaert, L. Jang, Erin Mclellan, M. Celik, S. Nam, Tae-Chan Kim, C.-C. Yeh, Sean D. Burns, P. Montanini, Charan V. V. S. Surisetty, Raghavasimhan Sreenivasan, Ju-Hwan Jung, B. Lherron, S.-B. Ko, E. Alptekin, Huiming Bu, Injo Ok, Jin Cho, Mukesh Khare, J. G. Hong, Gen Tsutsui, Andreas Scholze, Bomsoo Kim, D. Chanemougame, M. Mottura, M. Weybright, H. Mallela, K. Kim, Hemanth Jagannathan, Chanro Park, J. Jenq, Donald F. Canaperi, Young-Kwan Park, R. Jung, Kangguo Cheng
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
A 10nm logic platform technology is presented for low power and high performance application with the tightest contacted poly pitch (CPP) of 64nm and metallization pitch of 48nm ever reported in the FinFET technology on both bulk and SOI substrate. A
Autor:
Aron Cepler, Eric P. Solecky, Abraham Arceo, Benjamin Bunday, Oliver D. Patterson, Carsten Hartig, Alok Vaid, Andrew Stamper, Ralf Buengener, Erin Mclellan
Publikováno v:
SPIE Proceedings.
Metrology measurement and defect inspection steps in routes are more pervasive than many people realize and the number continues to grow. Digging deeper, it turns out that E-beam metrology and defect inspection tools typically occupy the most overall
Autor:
Scott Halle, Marcy Beard, Chiew-seng Koay, Oscar van der Straten, T. Levin, Lars Liemann, Juntao Li, D. Horak, Bryan Morris, Terry A. Spooner, S. Choi, Carol Boye, Donald F. Canaperi, Sylvie Mignot, Muthumanickam Sankarapandian, Elbert E. Huang, Chiahsun Tseng, James Hsueh-Chung Chen, Erin Mclellan, James J. Kelly, S. Fan, James J. Demarest, Nicole Saulnier, Hosadurga Shobha, Matthew E. Colburn, Balasubramanian S. Haran, Yongan Xu, Yunpeng Yin, Larry Clevenger, Christopher J. Waskiewicz, Mignot Yann, John C. Arnold
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
This work demonstrates the building of a 56 nm pitch copper dual damascene interconnects which connects to the local interconnect level. This M1/V0 dual-damascene used a triple pitch split bi-directional M1 and a double pitch split contact (V0) schem
Autor:
Alexander Elia, Nedal R. Saleh, Igor Turovets, Narender Rana, Matthew Sendelbach, Alok Vaid, Mark Kelling, Roy Koret, Helen Kim, Elad Arnon, Peter Ebersbach, Cornel Bozdog, Takahiro Kawasaki, John Allgair, Carsten Hartig, Toru Ikegami, Masahiko Ikeno, Hiroki Kawada, Erin Mclellan
Publikováno v:
SPIE Proceedings.
The accelerated pace of the semiconductor industry in recent years is putting a strain on existing dimensional metrology equipments (such as CDSEM, AFM, Scatterometry) to keep up with ever-increasing metrology challenges. However, a revolution appear
Autor:
T. Levin, James J. Kelly, Shyng-Tsong Chen, Guillaume Landie, Stephan A. Cohen, John C. Arnold, Anthony Francis Scaduto, Takamasa Usui, Kazumichi Tsumura, M. Tagami, Hosadurga Shobha, Scott Halle, D. Horak, C-S. Koay, Sean D. Burns, Hideyuki Tomizawa, Muthumanickam Sankarapandian, Mignot Yann, M. Ishikawa, O. van der Straten, Yunpeng Yin, Donald F. Canaperi, Yongan Xu, Hirokazu Kato, Terry A. Spooner, Erin Mclellan, Matthew E. Colburn
Publikováno v:
2011 IEEE International Interconnect Technology Conference.
This work demonstrates the building of 64 nm pitch copper single and dual damascene interconnects using pitch split double patterning scheme to enable sub 80nm pitch patterning. A self-aligned-via (SAV) litho/RIE scheme was used to create vias confin
Autor:
Remco Jochem Sebastiaan Groenendijk, Carl Maier, Ton van Niftrik, Daniel Corliss, Rene Carpaij, James Waddell, Hirokazu Kato, Guillaume Landie, Kehan Tian, Takao Tamura, Gregory McIntyre, R. Johnson, Ryoung-han Kim, Erin Mclellan, Christopher F. Robinson, Thomas Pepin, Scott Halle, Jerry Woods, Anthony Francis Scaduto, Matt Colburn
Publikováno v:
SPIE Proceedings.
This paper will describe the development, qualification, monitoring, and integration into a production environment of the world's first fully programmable illuminator for optical lithography. FlexRay TM, a programmable illuminator based on a MEMs mul
Autor:
Helen Kim, Yun Tao Jiang, Susan Ng, Boris Sherman, Cornel Bozdog, Chas Archie, Alok Vaid, Ahmad D. Katnani, Mark Kelling, Narender Rana, Igor Turovets, Bin Bin Yan, Ronen Urensky, Peter Ebersbach, Matthew Sendelbach, Boaz Brill, John Allgair, Carsten Hartig, Erin Mclellan, Michael Sendler
Publikováno v:
SPIE Proceedings.
Shrinking design rules and reduced process tolerances require tight control of CD linewidth, feature shape, and profile of the printed geometry. The Holistic Metrology approach consists of utilizing all available information from different sources li
Autor:
Chung-hsi J. Wu, Martin Glodde, Yayi Wei, Sivananda K. Kanakasabapathy, Karen Petrillo, P. Rao Varanasi, Hiroyuki Miyazoe, Chiew-seng Koay, Markus Brink, John C. Arnold, Yunpeng Yin, Muthumanickam Sankarapandian, Kwang-Sub Yoon, E. Anuja de Silva, Erin Mclellan, Michael A. Guillorn, Hakeem Yusuff, Sebastian Engelmann
Publikováno v:
SPIE Proceedings.
Underlayers (UL), such as organic planarizing layers (OPLs) or spin-on carbon (SOC) layers, play a very important role in various integration schemes of chip manufacturing. One function of OPLs is to fill in pre-existing patterns on the substrate, su
Autor:
H. Kawasaki, Junli Wang, V. Basker, J. Faltermeier, Pranita Kulkarni, James A. O’Neill, Tenko Yamashita, T. Levin, D. McHerron, H. Adhikari, S. Kanakasabapathy, R. C. Johnson, Huiming Bu, R. J. Miller, Hiroshi Sunamura, Mariko Takayanagi, Yu Zhu, Effendi Leobandung, Atsuro Inada, S. Holmes, Jason E. Cummings, Masami Hane, James J. Demarest, Amit Kumar, Atsushi Yagishita, T. Yamamoto, Bruce B. Doris, Hemanth Jagannathan, Erin Mclellan, Chung Hsun Lin, Matthew E. Colburn, Jeremy A. Wahl, Stefan Schmitz, J. Kuss, Kingsuk Maitra, Lisa F. Edge, Vamsi Paruchuri, Theodorus E. Standaert, R. H. Kim, C.-C. Yeh
Publikováno v:
2010 Symposium on VLSI Technology.
We demonstrate the smallest FinFET SRAM cell size of 0.063 µm2 reported to date using optical lithography. The cell is fabricated with contacted gate pitch (CPP) scaled to 80 nm and fin pitch scaled to 40 nm for the first time using a state-of-the-a