Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Erin C. H. Kyle"'
Autor:
Jingtian Fang, Pan Wang, Jin Chen, Daniel M. Fleetwood, Rong Jiang, Erin C. H. Kyle, Xiao Shen, Stephen W. Kaun, Ronald D. Schrimpf, James S. Speck, Sokrates T. Pantelides, En Xia Zhang
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 18:364-376
Gate and drain bias dependences of hot carrier degradation are evaluated for AlGaN/GaN HEMTs fabricated via two different process methods. Both positive and negative threshold voltage $V_{\mathbf{th}}$ shifts are observed for each device type, depend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de7d6e6ba25f3500e1c87f3886853c08
https://doi.org/10.1109/tdmr.2018.2847338
https://doi.org/10.1109/tdmr.2018.2847338
Autor:
Pan Wang, Xiao Shen, Rong Jiang, Daniel M. Fleetwood, En Xia Zhang, Jin Chen, Sokrates T. Pantelides, James S. Speck, Erin C. H. Kyle, Michael W. McCurdy, Ronald D. Schrimpf, Stephen W. Kaun
Publikováno v:
IEEE Transactions on Nuclear Science. 64:218-225
Responses to 1.8 MeV proton irradiation and 10-keV X-ray irradiation under typical bias conditions are investigated for AlGaN/GaN HEMTs fabricated with different types of process technologies. We find that, in contrast to previous generations of proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59a471134179ea59bd349ca5f49b440c
https://doi.org/10.1109/tns.2016.2626962
https://doi.org/10.1109/tns.2016.2626962
Publikováno v:
Journal of Crystal Growth. 454:164-172
InAlN grown by plasma-assisted molecular beam epitaxy often contains a honeycomb microstructure. The honeycomb microstructure consists of 5–10 nm diameter aluminum-rich regions which are surrounded by indium-rich regions. Layers without this micros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0212d20795b29785c3e9d6ea6c86a334
https://doi.org/10.1016/j.jcrysgro.2016.08.045
https://doi.org/10.1016/j.jcrysgro.2016.08.045
Autor:
Aaron R. Arehart, Ronald D. Schrimpf, Steven A. Ringel, Daniel M. Fleetwood, Erin C. H. Kyle, Paul Saunier, Yevgeniy Puzyrev, Stephen W. Kaun, Sokrates T. Pantelides, Jin Chen, En Xia Zhang, James S. Speck, C. Lee
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 16:282-289
A small degradation of threshold voltage and a significant reduction in dc and RF transconductance are observed for AlGaN/GaN high-electron-mobility transistors fabricated via three different process techniques and subjected to high voltage stress in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdde4d57449ff3b02092f5571217a831
https://doi.org/10.1109/tdmr.2016.2581178
https://doi.org/10.1109/tdmr.2016.2581178
Autor:
James S. Speck, Michael W. McCurdy, Erin C. H. Kyle, Ronald D. Schrimpf, Cher Xuan Zhang, Daniel M. Fleetwood, Stephen W. Kaun, Jin Chen, En Xia Zhang
Publikováno v:
IEEE Transactions on Nuclear Science. 61:2959-2964
AlGaN/GaN high electron mobility transistors (HEMTs) irradiated with 1.8-MeV protons show more relative degradation in RF power/current gain, cutoff frequency f T , and maximum oscillation frequency f max than DC transconductance. These result from r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::947163276249c8b0bababc6d4430a4fd
https://doi.org/10.1109/tns.2014.2362872
https://doi.org/10.1109/tns.2014.2362872
Publikováno v:
Journal of Applied Physics. 126:035703
The InAlN alloy system has bandgap energies that span the entire visible range and is a promising candidate for bandgap engineering. To facilitate bandgap engineering, the bandgap bowing for the entire composition range must be well characterized. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd9d2a0e22c330989d4e29496e3d0de1
https://doi.org/10.1063/1.5089671
https://doi.org/10.1063/1.5089671
Autor:
Sokrates T. Pantelides, James S. Speck, En Xia Zhang, Yevgeniy Puzyrev, Stephen W. Kaun, Erin C. H. Kyle, Cher Xuan Zhang, Michael W. McCurdy, Ronald D. Schrimpf, Daniel M. Fleetwood, Jin Chen
Publikováno v:
IEEE Transactions on Nuclear Science. 60:4080-4086
The responses to 1.8 MeV proton irradiation of AlGaN/GaN HEMTs grown under Ga-rich and ammonia-rich conditions are investigated in this work. Changes in defect energy distributions of AlGaN/GaN HEMTs during proton irradiation are characterized via te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c91cc49268122c365d16e2744684f5ee
https://doi.org/10.1109/tns.2013.2281771
https://doi.org/10.1109/tns.2013.2281771
Autor:
Stephen W. Kaun, Sokrates T. Pantelides, Kai Ni, Ronald D. Schrimpf, James S. Speck, Erin C. H. Kyle, Rong Jiang, Xiao Shen, Pan Wang, Jin Chen, Daniel M. Fleetwood, En Xia Zhang
Publikováno v:
2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Significant shifts in threshold voltage have been observed during 10-keV X-ray irradiation of passivated and unpassivated AlGaN/GaN HEMTs. Oxygen and hydrogen impurities are found to contribute to differences in threshold voltage shifts and transcond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::115afa0e08ee91717b5587b1b44b3a49
https://doi.org/10.1109/radecs.2016.8093099
https://doi.org/10.1109/radecs.2016.8093099
Publikováno v:
Journal of Crystal Growth. :80
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::478fecb5e6f2a2f0c33357e9b2a6a55d
https://doi.org/10.1016/j.jcrysgro.2018.05.017
https://doi.org/10.1016/j.jcrysgro.2018.05.017
Autor:
James S. Speck, Sokrates T. Pantelides, Jin Chen, Guo Xing Duan, Stephen W. Kaun, En Xia Zhang, Xiao Shen, Rong Jiang, Ronald D. Schrimpf, Erin C. H. Kyle, Daniel M. Fleetwood
Publikováno v:
Applied Physics Letters. 109:023511
Hot-carrier degradation and room-temperature annealing effects are investigated in unpassivated ammonia-rich AlGaN/GaN high electron mobility transistors. Devices exhibit a fast recovery when annealed after hot carrier stress with all pins grounded.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d84d07e18fdc29aa49ccc4305b85f74
https://doi.org/10.1063/1.4958706
https://doi.org/10.1063/1.4958706