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of 20
pro vyhledávání: '"Erik Velander"'
Autor:
Martin Lindahl, Torbjörn Trostén, Daniel Jansson, Mikael H Johansson, Erik Velander, Anders Blomberg, Hans‐Peter Nee
Publikováno v:
IET Electrical Systems in Transportation, Vol 11, Iss 1, Pp 47-57 (2021)
Abstract Results are reported from a successful field test with a silicon carbide (SiC) metal‐oxide‐semiconductor field‐effect transistor (MOSFET) traction inverter. The train has been operated over a 3‐month period in the Stockholm metro sys
Externí odkaz:
https://doaj.org/article/fe40c58e7cdb420ba35a23586756e9c7
Autor:
Erik Velander, Anders Blomberg, Hans-Peter Nee, Mikael H. Johansson, Torbjörn Trosten, Daniel Jansson, Martin Lindahl
Publikováno v:
IET Electrical Systems in Transportation. 11:47-57
Autor:
Hans-Peter Nee, Fredrik Botling, Martin Lindahl, Thomas Wiik, Giovanni Zanuso, Georg Bohlin, Erik Velander, Åsa Sandberg
Publikováno v:
IEEE Transactions on Power Electronics. 33:6072-6081
In this paper, a novel $dv/dt$ filter is presented targeted for 100-kW to 1-MW voltage source converters using silicon carbide (SiC) power devices. This concept uses the stray inductance between the power device and the converter output as a filter c
Publikováno v:
IEEE Transactions on Power Electronics. 33:1143-1153
In this paper, a new low-loss turn- on concept for the silicon insulated-gate bipolar transistor (Si-IGBT) in combination with silicon p-i-n diode is presented. The concept is tailored for two-level motor converters in the 100 kW to 1 MW range under
Publikováno v:
2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe).
Concerns have been raised that motor voltages might be very high if the fast switching characteristics of silicon carbide (SiC) are to be utilized. For this reason, the magnitude of the terminal voltage of an induction motor is investigated when fed
Publikováno v:
2018 IEEE Vehicle Power and Propulsion Conference (VPPC).
For the first time results are reported in literature of a successful field test using a silicon carbide (SiC) metal-oxide semi-conductor field-effect transistor (MOSFET) traction inverter operated in the field. The metro train has been operated over
Autor:
Diane-Perle Sadik, Hans-Peter Nee, Thomas Wiik, Erik Velander, Lennart Kruse, Andreas Lofgren, Stephan Meier
Publikováno v:
2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia).
The Silicon Carbide (SiC) MOSFET is considered to be the leading candidate for future 1.7 kV and 3.3 kV switches in 2-level voltage source converters (VSC) up to 2 MW. For those converters, short circuit (SC) in the dc-link loop can occur due to a nu
Publikováno v:
2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe).
The switching loss of the 1700 V SiC Planar-Gate MOSFET is significant at switching frequencies above 2 kHz. If a simple resistive gate driver is adjusted for the worst case operating point (temperature, commutated voltage and current) with a given a
Publikováno v:
2014 16th European Conference on Power Electronics and Applications.
The SiC (LV-JFET) has several advantages as a switch component in frequency converters. One challenge, when using the component at high switching speed is the coupled unwanted turn-on of the complementary switch, called parasitic turn-on. This paper
Autor:
Erik Velander, Sven Bellman
Publikováno v:
British Journal of Plastic Surgery. 12:1-21