Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Erik Skaar"'
Autor:
Henrik H. Sønsteby, Erik Skaar, Øystein S. Fjellvåg, Jon E. Bratvold, Helmer Fjellvåg, Ola Nilsen
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
Designing complex oxides with appreciable low-temperature synthesis remains a challenge. Here, the authors demonstrate an atomic layer deposition process for LaNiO3 to enable epitaxial thin films on LaAlO3 and SrTiO3 substrates deposited at 225 °C,
Externí odkaz:
https://doaj.org/article/858df9fbe6db442192e21b1321a27b4e
Autor:
Helmer Fjellvåg, Jon E. Bratvold, Henrik Hovde Sønsteby, Øystein Fjellvåg, Erik Skaar, Ola Nilsen
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
Nature Communications
Nature Communications
As traditional silicon technology is moving fast towards its fundamental limits, all-oxide electronics is emerging as a challenger offering principally different electronic behavior and switching mechanisms. This technology can be utilized to fabrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::feed6ca39518ffc4faa29e5b1ebd5a80
https://doaj.org/article/858df9fbe6db442192e21b1321a27b4e
https://doaj.org/article/858df9fbe6db442192e21b1321a27b4e
Autor:
Jon E. Bratvold, Jeffrey W. Elam, John W. Freeland, Henrik Hovde Sønsteby, Angel Yanguas-Gil, Helmer Fjellvåg, Erik Skaar, Ola Nilsen
Publikováno v:
Journal of Materials Chemistry C. 8:12662-12668
Resistors are essential parts of futuristic all-oxide electronic architectures, yet easily overlooked due to their apparent simplicity. Herein, design of thin films with specific resistance spanning six orders of magnitude by partial substitution of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3f3101d73ec65ca754c0fe19c9899cd
https://doi.org/10.1039/d0tc03406a
https://doi.org/10.1039/d0tc03406a