Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Erik S. Jeng"'
Publikováno v:
ICCE-TW
Neural computing capabilities has been studied by neuromorphic neural network circuit modeling in this work. A non- overlapped implanted (NOI) non-volatile memory device is used. The NOI array is designed to form the synapses of a convolutional neura
Publikováno v:
ICCE-TW
Neural computing capabilities in a neuromorphic neural network circuit is studied in this work. A non-overlapped implanted (NOI) non-volatile memory device is used as a synaptic unit. The NOI array is designed to form a convolutional neural network.
Publikováno v:
Microelectronics Journal. 90:306-314
A non-volatile memory (NVM) differential pair realization of the synaptic weight for an artificial neural network (ANN) circuit is investigated. Two non-overlapped implantation (NOI) nMOSFETs are proposed to form a NVM differential pair as an artific
Publikováno v:
Microelectronics Journal. 66:76-83
In this work, the newly developed neural chip applied in analog inputs for on-chip training and recognition is presented. We have designed the neural chip using single-transistor synapses which are capable of storing analog weights. The neural chip i
Publikováno v:
Microelectronic Engineering. 113:66-69
In this study, single-electron and multielectron injections and trapping events on gate-to-drain non-overlapped-implantation (NOI) MOSFETs at room temperature are investigated. The trapped charges cause a reduction in the channel current through the
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 20:843-847
AlN thin films were grown on SiO2/Si and quartz substrates using a helicon sputtering system. The dependence of film quality on growth parameters, such as total sputtering pressure, substrate temperature, and nitrogen concentration has been studied.
Publikováno v:
2010 5th IEEE Conference on Industrial Electronics and Applications.
Epitaxial single crystal AlN thin films have been obtained on (001) sapphire substrates by helicon sputtering system at growth temperature of 450°C. Surface acoustic wave (SAW) filters were fabricated on AlN/sapphire. The center frequency is 354.2MH
Publikováno v:
Optics Express. 23:2187
Room-temperature fabricated ZnO/ST-cut quartz is adopted for SAW ultraviolet (UV) photodetector. The ST-cut quartz substrate and ZnO layer are used for SAW excitation and photodetection, respectively. High resolution x-ray diffraction (XRD) and photo
Autor:
Chen-Chia Fan, Erik S. Jeng, Hong-Xiu Chen, Wei-Jun Tung, Kuang-Hao Chiang, Shang-Wei Chou, Kang-Ming Peng
Publikováno v:
Japanese Journal of Applied Physics. 53:096502
The promising use of non-overlapped implantation (NOI) n-type MOSFETs as nonvolatile memory (NVM) devices has received considerable interest owing to their simple device structure and compatibility with logic CMOS processing. In NOI n-type MOSFETs, t
Autor:
Erik S. Jeng, Guo-Wei Huang, Ching Chun Chang, Kang Ming Peng, Chia Sung Chiu, Chia Lin Ku, Lin-Kun Wu, Wen Lin Chen
Publikováno v:
Japanese Journal of Applied Physics. 48:04C182
A surface acoustic wave (SAW) vapor sensor is presented in this work. A SAW delay line oscillator on quartz substrate with the high gain complementary metal–oxide–semiconductor (CMOS) amplifier using a two-poly–two-metal (2P2M) 0.35 µm process