Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Erik Milosevic"'
Autor:
Erik Milosevic, Daniel Gall
Publikováno v:
AIP Advances, Vol 10, Iss 5, Pp 055213-055213-7 (2020)
In situ transport measurements on epitaxial 7.6-nm-thick Co(0001)/Al2O3(0001) films with and without Ti and TiN capping layers during O2 exposure are used to investigate the effects of surface chemistry on electron scattering at Co(0001) surfaces. Th
Externí odkaz:
https://doaj.org/article/ba0d49ae218d4dbea3ac581a28e4db7a
Publikováno v:
2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c24fd853a24259c0c7d1b7496d5d1635
https://doi.org/10.1109/asmc57536.2023.10121073
https://doi.org/10.1109/asmc57536.2023.10121073
Publikováno v:
IEEE Transactions on Electron Devices. 66:4326-4330
Epitaxial Ni(001) layers are sputter deposited on MgO(001) substrates and their electrical resistivity $\rho $ measured in situ as a function of thickness ${d}_{{\text {Ni}}}= $ 5–100 nm to quantify the resistivity size effect due to electron surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b29897696f890baafda12b33f96a9030
https://doi.org/10.1109/ted.2019.2934636
https://doi.org/10.1109/ted.2019.2934636
Publikováno v:
IEEE Transactions on Electron Devices. 66:3473-3478
Epitaxial Nb(011) and Nb(001) layers are sputter deposited onto ${a}$ -plane and ${r}$ -plane sapphire substrates, respectively, and their resistivity $\rho $ measured in situ , ex situ , and at 77 K as a function of layer thickness ${d}= 4$ –400 n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ad918dabbc91e90f8023f4cb5e3e59a
https://doi.org/10.1109/ted.2019.2924312
https://doi.org/10.1109/ted.2019.2924312
Autor:
Daniel Gall, Erik Milosevic
Publikováno v:
IEEE Transactions on Electron Devices. 66:2692-2698
In situ electron transport measurements on epitaxial 10-nm-thick Cu(001) with Al and AlO x cap layers indicate that the electron surface scattering specularity increases when the density of electronic surface states decreases. The Cu layers were sput
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94af115359df10293ac8e3298695b647
https://doi.org/10.1109/ted.2019.2910500
https://doi.org/10.1109/ted.2019.2910500
Autor:
Baiwei Wang, W. Alan Doolittle, Erik Milosevic, Yee Rui Koh, Renjiu Hu, Sit Kerdsongpanya, Daniel Gall, Jingjing Shi, Habib Ahmad, Samuel Graham, Patrick E. Hopkins, Zhiting Tian
Publikováno v:
Physical Review B. 102
As electronic devices shrink down to their ultimate limit, the fundamental understanding of interfacial thermal transport becomes essential in thermal management. However, a comprehensive understanding of phonon transport mechanisms that drive interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ebc5b0d08315464d373808ecb459e09
https://doi.org/10.1103/physrevb.102.205304
https://doi.org/10.1103/physrevb.102.205304
Publikováno v:
Applied Physics Letters. 120:041601
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45e7b78828fbf9a2e62efe4a2ffc12ff
https://doi.org/10.1063/5.0078877
https://doi.org/10.1063/5.0078877
Autor:
Katayun Barmak, Jerrold A. Floro, Ricardo A. Lebensohn, Kadir Sentosun, Amirali Zangiabadi, Erik Milosevic, Daniel Gall, Miroslav Zecevic
Publikováno v:
Journal of Applied Physics. 128:045304
Defects in epitaxial Ru(0001) films on c-plane sapphire, with nominal thicknesses of 10–80 nm, deposited at 350 °C and step-annealed to 950 °C, were characterized using transmission electron microscopy. The variation of Ru and sapphire lattice pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f076f9e3ebbe844ec092db1e750c5e5f
https://doi.org/10.1063/5.0015188
https://doi.org/10.1063/5.0015188
Autor:
Sit Kerdsongpanya, Alan C. West, Atharv Jog, Erik Milosevic, William E. Kaden, Asim Khanya, Kevin R. Coffey, Patrick K. Schelling, Amirali Zangiabadi, Kadir Sentosun, Katayun Barmak, Eduardo R. Mucciolo, Daniel Gall, Ryan Gusley, Sameer Ezzat, William Richardson
Publikováno v:
Journal of Vacuum Science & Technology A. 38:033406
The experimentally measured resistivity of Co(0001) and Ru(0001) single crystal thin films, grown on c-plane sapphire substrates, as a function of thickness is modeled using the semiclassical model of Fuchs-Sondheimer. The model fits show that the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b4f55f0d3f34afdf439141bdb19213d
https://doi.org/10.1116/6.0000018
https://doi.org/10.1116/6.0000018
Publikováno v:
2018 IEEE Nanotechnology Symposium (ANTS).
Ru(0001) and Co(0001) films with thickness d ranging from 5 to 300 nm are sputter deposited onto Al 2 O 3 (0001) substrates in order to quantify and compare the resistivity size effect. Both metals form epitaxial single crystal layers with their basa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb5cd2eaf97413baafae357de18612aa
https://doi.org/10.1109/nanotech.2018.8653560
https://doi.org/10.1109/nanotech.2018.8653560