Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Erik Jouwert Faber"'
Publikováno v:
IEEE transactions on semiconductor manufacturing, 25(3), 339-345. IEEE
We present a novel method for determining the temperature budget of the process side of silicon substrates and chips, based on well-known silicide formation reactions of metal–Si systems and (four-point probe) resistance measurements. In this paper
Autor:
Piet Bergveld, Wouter Olthuis, Ernst J. R. Sudhölter, Erik Jouwert Faber, Louis C. P. M. de Smet, Albert van den Berg, Han Zuilhof
Publikováno v:
ChemPhysChem, 6(10), 2153-2166
ChemPhysChem, 6(10), 2153-2166. Wiley-VCH Verlag
ChemPhysChem 6 (2005) 10
ChemPhysChem, 6(10), 2153-2166. Wiley-VCH Verlag
ChemPhysChem 6 (2005) 10
Herein, the influence of silicon surface modification via Si-C(n)H(2n+1) (n=10,12,16,22) monolayer-based devices on p-type 100 and n-type 100 silicon is studied by forming MIS (metal-insulator-semiconductor) diodes using a mercury probe. From current
Publikováno v:
24th International Conference on Microelectronic Test Structures, ICMTS 2011, 165-169
STARTPAGE=165;ENDPAGE=169;TITLE=24th International Conference on Microelectronic Test Structures, ICMTS 2011
STARTPAGE=165;ENDPAGE=169;TITLE=24th International Conference on Microelectronic Test Structures, ICMTS 2011
We present the extension of a method for determining the temperature budget of the process side of silicon substrates and chips, employing silicide formation reactions. In this work, silicon-on-insulator type substrates are used instead of bulk silic
Publikováno v:
IEEE International Conference on Microelectronic Test Structures (ICMTS), 2010, 30-33
STARTPAGE=30;ENDPAGE=33;TITLE=IEEE International Conference on Microelectronic Test Structures (ICMTS), 2010
STARTPAGE=30;ENDPAGE=33;TITLE=IEEE International Conference on Microelectronic Test Structures (ICMTS), 2010
Temperature is a crucial parameter in many planar technology processing steps. However, the determination of the actual temperature history at the device side of the substrate is not straightforward. We present a novel method for determining the temp
Autor:
Erik Jouwert Faber, Wouter Olthuis, Wilrike Groeneveld, Han Zuilhof, Ernst J. R. Sudhölter, Piet Bergveld, Wouter Sparreboom, Louis C. P. M. de Smet, Albert van den Berg, Johan G. Bomer
Publikováno v:
ChemPhysChem, 8(1), 101-112. Wiley-VCH Verlag
The electrochemical behavior of Si--C linked organic monolayers is studied in electrolyte-insulator-Si devices, under conditions normally encountered in potentiometric biosensors, to gain fundamental knowledge on the behavior of such Si electrodes un
Autor:
Erik Jouwert Faber, Smet, L. C. P. M., Wouter Olthuis, Zuilhof, H., Ernst Sudholter, Albert van den Berg
Publikováno v:
FOM dagen 2003
University of Twente Research Information (Pure Portal)
University of Twente Research Information (Pure Portal)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3d7b5a6d0670471c3ba1a0f559d6c31c
https://research.utwente.nl/en/publications/iv-characterization-of-mercury--organic-monolayer--silicon-structures(97483afc-8c91-4f76-8345-94d4594cbeaa).html
https://research.utwente.nl/en/publications/iv-characterization-of-mercury--organic-monolayer--silicon-structures(97483afc-8c91-4f76-8345-94d4594cbeaa).html
Publikováno v:
Applied physics letters, 98(8). American Institute of Physics
In this work, the kinetics of platinum silicide formation for thin Pt films _50 nm_ on monocrystalline _100_ silicon is investigated via in situ resistance measurements under isothermal _197–275 °C_conditions. For Pt2Si diffusion limited growth wa
Publikováno v:
University of Twente Research Information (Pure Portal)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::fc58ab86b352c19c7bb7bd79b92ae5ae
https://research.utwente.nl/en/publications/sensing-with-fets--once-now-and-future(a166708b-18a3-437b-a81d-6236100bef4e).html
https://research.utwente.nl/en/publications/sensing-with-fets--once-now-and-future(a166708b-18a3-437b-a81d-6236100bef4e).html
Publikováno v:
University of Twente Research Information (Pure Portal)
The Sense of Contact 2004; where Industry meets Science, workshop Sensortechnology
The Sense of Contact 2004; where Industry meets Science, workshop Sensortechnology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::927f36116cf26856b614aa58413db9ec
https://research.utwente.nl/en/publications/mott-schottky-measurements-as-a-probe-for-sitebinding-dynamics-at-electrolyte--thininsulator--silicon-structures(7f1df247-df4c-41ef-8f36-f20e69dd2e60).html
https://research.utwente.nl/en/publications/mott-schottky-measurements-as-a-probe-for-sitebinding-dynamics-at-electrolyte--thininsulator--silicon-structures(7f1df247-df4c-41ef-8f36-f20e69dd2e60).html
Autor:
Erik Jouwert Faber, Smet, L. C. P. M., Wouter Olthuis, Zuilhof, H., Ernst Sudholter, Albert van den Berg
Publikováno v:
University of Twente Research Information (Pure Portal)
MESA+ Day 2005
MESA+ Day 2005
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::7536f426c4d441ac05dc1c9b50623f68
https://research.utwente.nl/en/publications/plastic-the-future-insulator-for-mosfets-molecular-tuning-of-hgmonolayersi-diodes(2b7299f2-75ff-4f31-84a9-baad4fcc2e43).html
https://research.utwente.nl/en/publications/plastic-the-future-insulator-for-mosfets-molecular-tuning-of-hgmonolayersi-diodes(2b7299f2-75ff-4f31-84a9-baad4fcc2e43).html