Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Erik Haralson"'
Publikováno v:
IEEE Transactions on Electron Devices. 52:1423-1428
Self-heating in a 0.25 mu m BiCMOS technology with different isolation structures, including shallow and deep trenches on bulk and silicon-on-insulator (SOI) substrates, is characterized experimentally. Thermal resistance values for single- and multi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb192ae915abbe021ce427ee898f7b86
https://doi.org/10.1109/ted.2005.850634
https://doi.org/10.1109/ted.2005.850634
Publikováno v:
Materials Science in Semiconductor Processing. 8:245-248
A self-aligned nickel silicide (salicide) process is integrated into a non-selective base SiGeC HBT process. The device features a unique, fully silicided base region that grows laterally under the ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4935d394e090231e28f05279f86d0b28
https://doi.org/10.1016/j.mssp.2004.09.024
https://doi.org/10.1016/j.mssp.2004.09.024
Publikováno v:
Applied Surface Science. 224:330-335
A differential epitaxy SiGe:C heterojunction bipolar junction transistor (HBT) design is reported and used to study the effect of carbon on junction formation as well as the effect of lateral design parameters on ac and dc performance. The device exh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::796fe8ca4dc2e002a479f12a4c99cf2f
https://doi.org/10.1016/j.apsusc.2003.08.061
https://doi.org/10.1016/j.apsusc.2003.08.061
Autor:
Erdal Suvar, Mikael Östling, Henry H. Radamson, J.V. Grahn, Yong-Bin Wang, Bengt Gunnar Malm, Erik Haralson
Publikováno v:
Applied Surface Science. 224:336-340
Sources of base-collector and base-emitter leakage current in a SiGeC-based heterojunction bipolar transistor (HBT) with a selectively grown and chemical-mechanical polished (CMP) collector are discussed. Transmission electron microscopy and electric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff5155b7df01a44365e7b5feaacb900b
https://doi.org/10.1016/j.apsusc.2003.08.062
https://doi.org/10.1016/j.apsusc.2003.08.062
Publikováno v:
Physica Scripta. :138-141
Two high-frequency heterojunction bipolar transistor (HBT) architectures based on SiGeC have been fabricated and characterized. Different collector designs were applied either by using selective epitaxial growth doped with phosphorous or by nonselect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bbfc6fe733a37292810087b94b748d1
https://doi.org/10.1088/0031-8949/2004/t114/035
https://doi.org/10.1088/0031-8949/2004/t114/035
Autor:
Erik Haralson, Erdal Suvar, Mikael Östling, Yong-Bin Wang, Henry H. Radamson, Bengt Gunnar Malm
Publikováno v:
IEEE Electron Device Letters. 26:246-248
A novel SiGeC HBT process with a quasi-self-aligned emitter-base architecture and a fully nickel-silicided extrinsic base region has been developed. A very low total base resistance R/sub B/ was achieved along with simultaneous NiSi formation on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::08105d05775f7ccf2055eadb38ed9432
https://doi.org/10.1109/led.2005.844697
https://doi.org/10.1109/led.2005.844697
Publikováno v:
Physica Scripta. :34-36
A new module for the emitter formation in a bipolar transistor is presented. Arsenic- or phosphorus-doped polycrystalline silicon layer for the emitter formation is deposited in a reduced pressure ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bc3ed66b3a2ad4c211f1084d36b6722
https://doi.org/10.1088/0031-8949/2004/t114/007
https://doi.org/10.1088/0031-8949/2004/t114/007
Publikováno v:
International Semiconductor Device Research Symposium, 2003.
This paper describes a systematic 2-D simulation study with ISE TCAD in which the SIC has been investigated through a design of experiments (DOE). A central composite response surface design was used to model the effect of the SIC width (W/sub SIC/),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00c552c2a26a51370c82a5aa807ec27d
https://doi.org/10.1109/isdrs.2003.1271994
https://doi.org/10.1109/isdrs.2003.1271994
Publikováno v:
MRS Proceedings. 745
The reactions of Ni with polycrystalline Si, Si0.82Ge0.18 and Si0.818Ge0.18C0.002 films in two different configurations during rapid thermal processing were studied. For the usually studied planar configuration with 20 nm thick Ni on 130–290 nm thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e86b87edbe2f3ee33820632ab1811b22
https://doi.org/10.1557/proc-745-n4.8
https://doi.org/10.1557/proc-745-n4.8
Publikováno v:
Physica Scripta. :64
A new collector technology intended for an integrated high-speed SiGe heterojunction bipolar transistor (HBT) is reported. The collector was fabricated by selective epitaxial growth (SEG) using chemical vapor deposition at 770?C under reduced pressur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c495d258a8c28edafd0a2f959308a0b0
https://doi.org/10.1238/physica.topical.101a00064
https://doi.org/10.1238/physica.topical.101a00064