Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Erik G. Herbert"'
Autor:
Erik G. Herbert, Stephen A. Hackney, P. Sudharshan Phani, Fereshteh Mallakpour, Masoud Kasraie
Publikováno v:
Journal of Materials Research
Nanoindentation and electron microscopy have been used to examine the length-scale-dependent stress relaxation mechanisms in well-annealed, high-purity indium at a homologous temperature of 0.69. The experimental methods, analysis, and observations s
Autor:
Thomas G. Bowman, Katherine M. Breedlove, Dane Bower, Erik G. Herbert, Douglas J. Casa, Alicia Pike M Lacy
Publikováno v:
Sports Biomechanics. :1-12
Our purpose was to compare the mechanical properties of the protective outer shells of various athletic helmets in their final, fully manufactured form. Sections were taken from 3 different helmet shells (Bauer RE-AKT hockey helmet, Cascade R lacross
Publikováno v:
Journal of Materials Research. 36:787-796
We report on the mechanical behavior of a solid Li-ion conductor, lithium phosphorous oxynitride (Lipon), for solid-state batteries. In particular, the purpose of this investigation was to quantify the resistance to cracking (fracture toughness) of t
Publikováno v:
Journal of Materials Research. 34:2347-2369
The extrinsic indentation size effect (ISE) is utilized to analyze the depth-dependent hardness for Berkovich indentation of non-uniform dislocation distributions with one and two dimensional deformation gradients and is then extended to indentation
Autor:
Bryan D. McCloskey, Steven Harris, Jagjit Nanda, Claus Daniel, Jie Xiao, Venkat Anandan, Marca M. Doeff, Chunsheng Wang, Jeff Sakamoto, Nitash P. Balsara, Chunmei Ban, Erik G. Herbert, Joseph A. Libera, Ilias Belharouak, Andrew S. Westover, Shirley Meng, Subra Herle, Dongping Lu, Sergiy Kalnaus, Nancy J. Dudney, Bruce Dunn, Eric D. Wachsman, Steve W. Martin, Josh Buettner-Garrett, Thomas A. Yersak, Sanja Tepavcevic, Paul Albertus, Zonghei Chen, Ethan C. Self, Matthew T. McDowell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36d60d3a493d359e6247772fd6e4f5df
https://doi.org/10.2172/1731043
https://doi.org/10.2172/1731043
Autor:
Stuart D. Hellring, Erik G. Herbert, Scott A. Roberts, Dongping Lu, Shriram Santhanagopalan, Vincent Battaglia, Stephen W. Sofie, Matthew Keyser, Venkat Srinivasan, Ryan Brow, Madhuri Thakur, Trevor L. Dzwiniel, Moni Kanchan Datta, Thomas Bethel, Brian A. Mazzeo, Ravi Prasher, Long-Qing Chen, Joseph Sunstrom, Ying Meng, Jihui Yang, Jun Liu, Partha P. Mukherjee, Ahmad Pesaran, Yi Cui, Donghai Wang, Nianqiang Wu, Shabbir Ahmed, Khalil Amine, Ian Smith, Zhengcheng Zhang, Xiao-Qing Yang, Andrew N. Jansen, Oleg I. Velikokhatnyi, Joshua Lamb, Esther S. Takeuchi, Jeff Sakamoto, Eric J. Dufek, John T. Vaughey, Yang-Tse Cheng, Wenquan Lu, Robert C. Tenent, David L. Wood, Jianchao Ye, Weijie Mai, Jun Lu, Nanda Jagjit, Jeffrey Allen, Alex K.-Y. Jen, Ira Bloom, Ron Hendershot, Perla B. Balbuena, Zhenan Bao, Andrew M. Colclasure, Anthony K. Burrell, Marca M. Doeff, LeRoy Flores, David C. Bock, Satadru Dey, Jianming Bai, Neil Kidner, Chongmin Wang, Jason R. Croy, Lee Walker, Feng Lin, Henry Costantino, Jagjit Nanda, Kenneth J. Takeuchi, Jie Xiao, David C. Robertson, Xingcheng Xiao, Linda Gaines, Kandler Smith, Guoying Chen, Mohan Karulkar, Yangchuan (Chad) Xing, Feng Wang, Jiang Fan, Aron Saxon, Ozge Kahvecioglu, Deyang Qu, Vojislav R. Stamenkovic, Qinglin Zhang, Peter N. Pintauro, Chulheung Bae, Herman Lopez, John B. Goodenough, Ji-Guang Zhang, Mohamed Taggougui, Toivo T. Kodas, Xiaolin Li, Robert Kostecki, Michael Slater, Larry A. Curtiss, Hakim Iddir, Yan Wang, Amin Salehi, Glenn G. Amatucci, Nenad M. Markovic, Seong-Min Bak, Huajian Gao, Joseph A. Libera, Chao-Yang Wang, Jianlin Li, Yue Qi, Arumugam Manthiram, Christopher S. Johnson, Srikanth Allu, Michael C. Tucker, Brian W. Sheldon, Amy C. Marschilok, Kristin A. Persson, Jeff Spangenberger, Gao Liu, Frank M. Delnick, Young Ho Shin, Donal P. Finegan, Brandon C. Wood, Cary Hayner, Daniel P. Abraham, Michael F. Toney, Ahn Ngo, Bryan D. McCloskey, Xi (Chelsea) Chen, Tobias Glossmann, William Chueh, Wu Xu, Dean R. Wheeler, Wenjuan Liu-Mattis, Francois Usseglio-Viretta, Prashant Kumt, Alec Falzone, Panos D. Prezas, Nancy J. Dudney, Zhijia Du, Ranjeet Rao, Gerbrand Ceder, Chi Cheung, Lin-Wang Wang, Dusan Strmcnik, Enyuan Hu, Nitash P. Balsara, Bapiraju Surampudi, Andrew S. Westover, Sheng Dai, Jorge M. Seminario, Huolin L. Xin, Ilias Belharouak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c20b1c5a38cc720ed4eeef37d15022e8
https://doi.org/10.2172/1637433
https://doi.org/10.2172/1637433
Publikováno v:
Journal of Materials Research. 33:1347-1360
Nanoindentation experiments performed in 5 and 18 μm thick vapor deposited polycrystalline lithium films at 31 °C reveal the mean pressure lithium can support is strongly dependent on length scale and strain rate. At the smallest length scales (ind
Publikováno v:
Journal of Materials Research. 33:1361-1368
Nanoindentation experiments performed in high-purity vapor deposited lithium films at 31 °C reveal a strain rate and length scale dependence in the stress at which pop-in type events signal an abrupt transition from diffusion to dislocation-mediated
Publikováno v:
Journal of Materials Research. 33:1335-1346
Nanoindentation has been used to measure the elastic modulus of 5 and 18 μm thick high-purity vapor deposited polycrystalline lithium films at 31 °C. Over indentation depths ranging from 150 to 1100 nm, the modulus is found to vary with film thickn
Publikováno v:
MRS Advances. 3:477-486
Instrumented indentation of a high purity Fe surface with unresolved surface deformation due to mechanical polishing is compared to the same grain surface annealed at increasing time and temperature. The differences in indentation size effect behavio