Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Erik C Hadland"'
Publikováno v:
Inorganic Chemistry. 59:12536-12544
The reaction of ultrathin layers of Mo and Ti with Se was investigated, and significantly different reaction pathways were found. However, in both systems postdeposition annealing results in smooth...
Synthesis and Properties of (BiSe)0.97MoSe2: A Heterostructure Containing Both 2H-MoSe2 and 1T-MoSe2
Autor:
Constance Schmidt, David C. Johnson, Shannon Sanaya Fender, Thomas Seyller, Erik C. Hadland, Fabian Göhler, Gavin Mitchson, Dietrich R. T. Zahn
Publikováno v:
Chemistry of Materials. 31:5824-5831
The metastable heterostructure, (BiSe)0.97MoSe2, containing alternating bilayers of BiSe and MoSe2 trilayers was synthesized using the modulated elemental reactant method to determine if charge transfer from BiSe to MoSe2 would stabilize the metallic
Autor:
Hyejin Jang, David G. Cahill, Matthias Falmbigl, Douglas L. Medlin, Robert Fischer, Erik C. Hadland, David W. Johnson
Publikováno v:
Chemistry of Materials. 31:5699-5705
A significant experimental challenge in testing proposed relationships between structure and properties is the synthesis of targeted structures with atomistic control over both the structure and th...
Publikováno v:
Inorganic chemistry. 59(17)
The reaction of ultrathin layers of Mo and Ti with Se was investigated, and significantly different reaction pathways were found. However, in both systems postdeposition annealing results in smooth dichalcogenide films with specific thicknesses deter
Autor:
Dmitri Leo M. Cordova, David C. Johnson, Danielle M. Hamann, Dylan Bardgett, Erik C. Hadland, Alexander C. Lygo, Liese A. Maynard, Marco Esters, Suzannah R. Wood
Publikováno v:
Chemistry of Materials. 30:6209-6216
The composition and thickness of thin films determine their physical properties, making the ability to measure the number of atoms of different elements in films both technologically and scientifically important. For thin films, below a certain thick
Autor:
Marc C. French, Bradley J. Nordell, Anthony N. Caruso, Sean W. King, Han Li, Michelle M. Paquette, William A. Lanford, Donghyi Koh, Erik C. Hadland, Sage R. Bauers, Antonio M. Rudolph, David W. Johnson, Jung Hwan Yum, Patrick E. Hopkins, Liza Ross, Sanjay K. Banerjee, Liyi Li, Patrick Henry, John T. Gaskins, Devin R. Merrill
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:N189-N208
Autor:
Erik C, Hadland, Hyejin, Jang, Niklas, Wolff, Robert, Fischer, Alexander C, Lygo, Gavin, Mitchson, Dongyao, Li, Lorenz, Kienle, David G, Cahill, David C, Johnson
Publikováno v:
Nanotechnology. 30(28)
Films containing 8, 16, 24, 32 and 64 MoSe
Autor:
David C. Johnson, Erik C. Hadland, Marco Esters, Fabian Göhler, Gavin Mitchson, Martina Wanke, Jeffrey Ditto, Kim Ta, Richard G. Hennig, Thomas Seyller, Erik Bigwood
Publikováno v:
ACS Nano. 10:9489-9499
(BiSe)1+δ(NbSe2)n heterostructures with n = 1–4 were synthesized using modulated elemental reactants. The BiSe bilayer structure changed from a rectangular basal plane with n = 1 to a square basal plane for n = 2–4. The BiSe in-plane structure w
Autor:
Alexander C. Lygo, Lorenz Kienle, Erik C. Hadland, Robert Fischer, David W. Johnson, Hyejin Jang, Niklas Wolff, David G. Cahill, Dongyao Li, Gavin Mitchson
Publikováno v:
Nanotechnology. 30:285401
Films containing 8, 16, 24, 32 and 64 MoSe2 layers were synthesized using the modulated elemental reactants method. X-ray reflectivity patterns showed that the annealed films were the targeted number of MoSe2 layers thick with atomically smooth inter
Autor:
Constance Schmidt, David W. Johnson, Erik C. Hadland, Thomas Seyller, Fabian Göhler, Florian Speck, Dietrich R. T. Zahn
Publikováno v:
physica status solidi (b). 256:1970015