Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Erick D. Ochoa"'
Publikováno v:
American Journal of Physics. 89:300-306
In this work, we present a master equation approach to simulating DC transport through single electron transistors and quantum dots suitable for an upper-division undergraduate computational physics project. After introducing the basic theory describ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e5f87014b56b404b0e23e5ede42fac9
https://doi.org/10.1119/10.0002404
https://doi.org/10.1119/10.0002404
Autor:
Binhui, Hu, Erick D, Ochoa, Daniel, Sanchez, Justin K, Perron, Neil M, Zimmerman, M D, Stewart
Publikováno v:
Journal of applied physics. 124
We have measured the low-frequency time instability known as charge offset drift of Si/SiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::fdc13ae59331cb6a199204d09ab6fe24
https://pubmed.ncbi.nlm.nih.gov/31274883
https://pubmed.ncbi.nlm.nih.gov/31274883
Autor:
Neil M. Zimmerman, Justin K. Perron, Binhui Hu, Daniel H. Sanchez, Michael Stewart, Erick D. Ochoa
We have measured the low-frequency time instability known as charge offset drift of Si/SiO$_2$ single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less charge offse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea11707e37cba63e138836747b04a74a
https://europepmc.org/articles/PMC6604639/
https://europepmc.org/articles/PMC6604639/
