Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Eric Weisbrod"'
Publikováno v:
Journal of Accounting Research. 60:1695-1740
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbe2762e3a53a566d12c0ae8261db284
https://doi.org/10.1111/1475-679x.12457
https://doi.org/10.1111/1475-679x.12457
Publikováno v:
SSRN Electronic Journal.
We investigate the incremental market reaction to first-time going concern audit reports (GCARs) relative to similarly distressed non-GCAR firms. We utilize a matched-sample research design to show that first-time GCARs are associated with incrementa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::359e363717b38cb8e06d9404e89706bc
https://doi.org/10.2139/ssrn.2433626
https://doi.org/10.2139/ssrn.2433626
Autor:
Richard D. Peters, Eric Weisbrod, Pawitter J. S. Mangat, James R. Wasson, Scott Daniel Hector, Donna J. O'Connell, Jonathan L. Cobb, Bing Lu, Sergei V. Postnikov
Publikováno v:
SPIE Proceedings.
We have exposed 10 wafers on the Engineering Test Stand (ETS), the 0.1 NA EUV scanner at Sandia National Laboratories in Livermore, CA. The EUV reflective mask was fabricated in-house using a Ta-based absorber stack on Mo/Si multilayers. The printed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd44c3f89d26bf2715bd479eb64a9d3a
https://doi.org/10.1117/12.537366
https://doi.org/10.1117/12.537366
Autor:
Eric Weisbrod, James R. Wasson, Sang-In Han, Pawitter J. S. Mangat, William J. Dauksher, Rich Gregory, Scott Daniel Hector, Qianghua Xie, Kristine M. Rosfjord
Publikováno v:
SPIE Proceedings.
Phase Shift Masks (PSM) for Extreme Ultraviolet Lithography (EUVL) have the potential for extending the lithographic capability of EUVL beyond the 32-nm node. The concept of EUV PSM structures can be implemented either by adding absorber structures o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::672d1a15638e39033abb913da718b368
https://doi.org/10.1117/12.535503
https://doi.org/10.1117/12.535503
Autor:
E. Luckowski, Richard D. Peters, Bill Dauksher, Eric Weisbrod, Colita Parker, Jonathan L. Cobb
Publikováno v:
SPIE Proceedings.
The high absorption of extreme ultraviolet (EUV) radiation by all materials necessitates the use of thin photoresist films with thicknesses less than 200 nm for EUV lithography to ensure good imaging. Thinning the resist thickness below 150 nm or eve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff21ef578c5e9e669ee0cd3ebec872ff
https://doi.org/10.1117/12.535643
https://doi.org/10.1117/12.535643
Autor:
Eric Weisbrod, Pawitter J. S. Mangat, William J. Dauksher, Bernd Geh, Kevin J. Nordquist, James R. Wasson, Kevin Cummings, Bing Lu
Publikováno v:
SPIE Proceedings.
We report in this work experimental and theoretical results showing the effects of absorber reflectivity on standard flare measurements, image formation and how this may contribute to various image metrics used in lithography. Our study shows that un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8305c65c5398c5079c26ae3cad37f233
https://doi.org/10.1117/12.516925
https://doi.org/10.1117/12.516925
Autor:
Eric Weisbrod, James R. Wasson, Adolpho Rios, Pawitter J. S. Mangat, Eric S. Ainley, Bing Lu, Kevin J. Nordquist
Publikováno v:
SPIE Proceedings.
In this work, we analyzed resist CD uniformity on 6025 substrates in terms of resist PEB sensitivity, PEB time, temperature variation during ramp up, hotplate vacuum and the application of a chill plate. We found that the resist PEB sensitivity, PEB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98a4585fdc8a0759483b4f2344dbb3ae
https://doi.org/10.1117/12.517989
https://doi.org/10.1117/12.517989
Publikováno v:
SPIE Proceedings.
In this paper, we report on evaluation of a high e-beam sensitive CA resist, FEP171 for EUVL mask fabrication. This resist exhibits a PEB temperature sensitivity of ~1nm/°C and 8.3 nm (3 σ) CD uniformity across an EUVL mask patterned with 200 nm de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3240c757d5b6e1b23321ec5d9e15eb5
https://doi.org/10.1117/12.504553
https://doi.org/10.1117/12.504553
Autor:
William J. Dauksher, Pawitter J. S. Mangat, Qianghua Xie, Scott Daniel Hector, Sang-In Han, Eric Weisbrod
Publikováno v:
SPIE Proceedings.
Phase Shift Masks (PSM) for Extreme Ultraviolet Lithography (EUVL) have the potential for extending the lithographic capability of EUVL beyond the 45-nm node. Typical PSM structures, such as for attenuated PSMs (Att-PSMs), are similar to those of bin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85f2d794d46a27ebb58819f06cfd18e9
https://doi.org/10.1117/12.484731
https://doi.org/10.1117/12.484731
Autor:
Eric Weisbrod, William J. Dauksher, Pawitter J. S. Mangat, Sang-In Han, James R. Wasson, N. V. Edwards, Donald Pettibone
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet lithography (EUVL) is the leading candidate for next generation lithography with the potential for extendibility beyond the 50-nm node. The inspection contrast of DUV and 193nm optical reticles is essentially 100%; however, EUVL r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bcc89582c46ea9789d1a8fb6f6563a3
https://doi.org/10.1117/12.468104
https://doi.org/10.1117/12.468104