Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Eric Vandenbossche"'
Autor:
Olivier Weber, Doohong Min, Alexandre Villaret, Jinha Park, Ilmin Lee, Eric Vandenbossche, Dohun Kim, Jiyoung Yun, Jinwoo Park, Minuk Lee, Jinseok Kang, Hyunjong Lee, Youngju Choi, Inhwan Kim, Joochan Kim, Dhori Kedar, Dhori Kedar Janardan, Sebastien Haendler, Salim Elghouli, Sophie Puget, Christophe Bernicot, Emilie Bernard, Francois Wacquant, Fabien Nimsgern, Joonhyuk Choi, Shigenobu Maeda, Jongho Lee, Franck Arnaud
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29283596955a24bf8f5fb7a36cf4e89e
https://doi.org/10.1109/iedm45625.2022.10019397
https://doi.org/10.1109/iedm45625.2022.10019397
Autor:
Doohong Min, Jinha Park, Olivier Weber, Francois Wacquant, Alexandre Villaret, Eric Vandenbossche, Franck Arnaud, Emilie Bernard, Salim Elghouli, Christian Boccaccio, Laurent Favennec, Roberto Gonella, Jean Galvier, Jiyoung Yun, Jinwoo Park, Minuk Lee, Pyeongjun Yoon, Ilmin Lee, Heaseok Seo, Hoonsung Choi, Changbong Oh, Jinseok Kang, Sewan Park, Hyunjong Lee, Youngju Choi, Inwhan Kim, Joohyun Jo, Yoonsoo Park, Jinchan Park, Youngja Lee, Jinhyeok Jung, Juwon Lee, Hana Jang, Jihun Kang, Jisoo Kwon, Joochan Kim, Shigenobu Maeda, Youngki Hong
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::339c1b9b82250f9e3ef22cf9ee1e4216
https://doi.org/10.1109/iedm19574.2021.9720542
https://doi.org/10.1109/iedm19574.2021.9720542
Publikováno v:
Journal of Applied Physics. 77:5630-5641
A study of high‐concentration boron diffusion using a precipitation model is presented in this paper. Recent experimental results on the annealing of boron implanted in preamorphized silicon give the opportunity to analyze, with the help of simulat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e313a2872753b6f50ce766822aa5640b
https://doi.org/10.1063/1.359205
https://doi.org/10.1063/1.359205
Autor:
Eric Vandenbossche, B. Baccus
Publikováno v:
Microelectronics Journal. 26:235-242
Boron diffusion and activation at high concentrations are key problems in the formation of shallow P+ junctions. Therefore, it is needed to understand and to predict accuratly the dopant behaviour under these conditions. In this paper, the modeling o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9856884fc8535fa4b8197ec5db6be703
https://doi.org/10.1016/0026-2692(95)98924-g
https://doi.org/10.1016/0026-2692(95)98924-g
Autor:
B. Baccus, Eric Vandenbossche
Publikováno v:
Journal of Applied Physics. 73:7322-7330
A new type of boron cluster is presented through the study of boron diffusion at high concentrations under predeposition conditions. Recent experimental results of boron predeposition give the opportunity to analyze, with the simulations, the behavio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::069e0bbe81c39b87d96276a2203370b9
https://doi.org/10.1063/1.354022
https://doi.org/10.1063/1.354022
Autor:
B. Baccus, Eric Vandenbossche
Publikováno v:
Journal of Applied Physics. 72:447-453
The effective diffusivity of substitutional impurities in silicon is reconsidered by involving the point defects. Four basic reactions, including the interstitials and vacancies contributions, are necessary to derive a general formulation of the effe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60093f91925b028c94e41a570db7fd07
https://doi.org/10.1063/1.351873
https://doi.org/10.1063/1.351873
Autor:
Marc de Wolf, Catherine De Keukeleire, Johan Hilda Witters, Hugo Van Hove, Eric Vandenbossche
Publikováno v:
Microelectronics reliability, 38(6-8), 1097-1101. Elsevier
This paper presents the Hot Carrier Endurance of a High Voltage (100V) self aligned Floating lateral nDMOS transistor. Based on experimental results, a Safe Operating Area is determined according to maximum 10% shift of electrical parameters within 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::481ca2db808c44d15419b162b0c3fba1
https://research.utwente.nl/en/publications/aa216664-4e2d-4eec-9160-99fcd2f4c882
https://research.utwente.nl/en/publications/aa216664-4e2d-4eec-9160-99fcd2f4c882
Publikováno v:
Simulation of Semiconductor Processes and Devices 1998 ISBN: 9783709174159
Determination of fast/slow models and/or statistical models as a function of process dispersions are very challenging for designing new circuits. The present paper describes a methodology to extract fast/slow models and statistical models based on ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0213b1b053c363a5db63e93b2448aafb
https://doi.org/10.1007/978-3-7091-6827-1_24
https://doi.org/10.1007/978-3-7091-6827-1_24
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Conference
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