Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Eric Shero"'
Publikováno v:
Industrial & Engineering Chemistry Research. 43:2977-2985
Surface molecular contamination of gate dielectrics in metal oxide semiconductor structures is a problem affecting the performance of integrated circuits. The impact depends strongly on the nature of the interactions between the contaminants and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04847b81cffe84e364169f4ae93aec0a
https://doi.org/10.1021/ie0305972
https://doi.org/10.1021/ie0305972
Publikováno v:
AIChE Journal. 50:1881-1888
Moisture contamination of HfO2 and ZrO2 ultrathin dielectric films, deposited by atomic layer chemical vapor deposition (ALCVD™), is investigated and compared to that of native SiO2. Results show that HfO2 and ZrO2 surfaces adsorb higher amounts of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0371250449c1f0a3c9313a32f607185
https://doi.org/10.1002/aic.10148
https://doi.org/10.1002/aic.10148
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 9:312-319
This work focuses on the different mechanisms of impurity transport and distribution in process equipment, with particular emphasis on moisture distribution in vertical thermal reactors. The results are important in both control and metrology of gase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90bbbd6351c5c414425dd47b8e70b4c0
https://doi.org/10.1109/66.536104
https://doi.org/10.1109/66.536104
Publikováno v:
Journal of the IEST. 38:43-46
The permeation coefficients of H2O and O2 through polymeric O-rings were obtained in this study. Increases of trace level impurities in an ultra-high purity nitrogen purge gas due to the permeation processes were measured using an atmospheric pressur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc6c633a0cab54ff658f564ad18c68ba
https://doi.org/10.17764/jiet.2.38.2.k6491358g0l83691
https://doi.org/10.17764/jiet.2.38.2.k6491358g0l83691
Publikováno v:
Applied Physics Letters. 81:1417-1419
Thermal stability of gate stack structures composed of ZrO2 gate dielectrics and silicon electrodes was investigated. The ZrO2 films were deposited by atomic layer deposition, while the polycrystalline silicon electrodes were deposited using differen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a915fbc9a44a5410965b2340b09f72af
https://doi.org/10.1063/1.1499513
https://doi.org/10.1063/1.1499513
Autor:
Johan Swerts, Steven Marcus, Fourmun Lee, Jan Willem Maes, Annelies Delabie, Tom E. Blomberg, Glen D. Wilk, Mickael Gros-Jean, E. Deloffre, Eric Shero
Publikováno v:
2007 IEEE/SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Atomic layer deposition (ALD) recently emerged as an enabling technology for microelectronic device fabrication. This technique provides the unique capability to deposit ultra thin films with the thickness control, uniformity, step coverage, and elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4f6c9e7b72cbf5431a2b76ed54aaccf
https://doi.org/10.1109/asmc.2007.375064
https://doi.org/10.1109/asmc.2007.375064
Autor:
Chang-gong Wang, YG Fedorenko, Chao Zhao, Wim Deweerd, Annelies Delabie, Glen D. Wilk, Stefan De Gendt, Jan Willem Maes, Johan Swerts, Eric Shero
Publikováno v:
MRS Proceedings. 917
The electrical performance of hafnium silicate (HfSiOx) gate stacks grown by atomic layer deposition (ALD) has been evaluated in capacitors and transistors. First, scaling potential of HfSiOx layers was studied as function of composition and thicknes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::499559c3b38017634a73fa36df491899
https://doi.org/10.1557/proc-0917-e11-04
https://doi.org/10.1557/proc-0917-e11-04
Autor:
P. Lysaght, JaeEun Lim, Eric Shero, M. Freiler, K. Torres, G. Bersuker, Christophe F. Pomarede, C. Werkhoven, R. Bergmann, Michael Eugene Givens, D. Riley, J. Chen, P. M. Zeitzoff, B. Foran, Chadwin D. Young, G. Gebara, A. Agarwal, H. R. Huff, A. Hou, D. Derro, F. Shaapur, R.W. Murto, S. Borthakur, Hong-Jyh Li, B. Nguyen, Joel Barnett, G. A. Brown, Y. Kim, M. Mazanez
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
Conventional self-aligned MOSFET transistors with poly-silicon gate-electrode were successfully fabricated using Hf-oxide and Zr-oxide as high-k gate-dielectrics. The gate-stack consisting of poly-silicon on Hf-oxide exhibited promising transistor ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e991fb7f17bd2f463290502b8f5a6569
https://doi.org/10.1109/iedm.2001.979538
https://doi.org/10.1109/iedm.2001.979538
Autor:
M. A. Verheijen, H. de Waard, Jan Willem Maes, Z. M. Rittersma, C. Werkhoven, Steven Marcus, Eric Shero, Christophe F. Pomarede
Publikováno v:
Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98ffdf2707f1460be4b2b3ff8c667671
https://doi.org/10.7567/ssdm.2002.b-3-1
https://doi.org/10.7567/ssdm.2002.b-3-1
Autor:
Steven James Hillenius, J. Rosamilia, J.L. Grazul, M.R. Baker, F.P. Klemens, N.A. Ciampa, C. Werkhoven, J.T.-C. Lee, P. Kalavade, B. Busch, David A. Muller, K. Short, C. A. King, T. Boone, Eric Shero, G.D. Wilk, B. J. Sapjeta, M. Mazanec, M.D. Morris, K. Steiner, A. Kornblit, R.W. Johnson, E. Ferry, Christophe F. Pomarede, P.J. Silverman, D. C. Jacobson, J.F. Miner, William M. Mansfield, Sang Hyun Oh, T.W. Sorsch, John Michael Hergenrother, R.C. Keller, H. W. Krautter, Martin L. Green, Anthony T. Fiory, Don Monroe, M. Bude, Paul M. Voyles, Michael Eugene Givens, T. Nigam
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
We have integrated HfO/sub 2/ and Al/sub 2/O/sub 3/ gate dielectrics grown by atomic layer chemical vapor deposition (ALD) with poly-Si gate electrodes in the vertical replacement-gate (VRG) MOSFET geometry. These transistors are among the first repo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65dbeba3e174de79971bdaee0ce917a1
https://doi.org/10.1109/iedm.2001.979400
https://doi.org/10.1109/iedm.2001.979400