Výsledky vyhledávání - "Eric S. Moyer"

Structural Comparison of Hydrogen Silsesquioxane Based Porous Low-k Thin Films Prepared with Varying Process Conditions

Autor: Wei Chen, Eric S. Moyer, Eric K. Lin, Hae-Jeong Lee, Howard Wang, Wen-Li Wu

Publikováno v: Chemistry of Materials. 14:1845-1852

The structures of hydrogen silsesquioxane based porous low dielectric constant (low-k) films (XLK) prepared with varying process conditions are characterized using a combination of high-energy ion scattering, X-ray reflectivity, and small-angle neutr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2a9404ed5b13cbbe6e2ad7c407a5870b
https://doi.org/10.1021/cm011569h

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Synthesis and Ceramic Conversion Reactions of Pinacolborane- and Diethylborazine-Modified Poly(vinylsiloxane)s. The Development of a Processable Single-Source Polymeric Precursor to Boron-Modified Silicon Carbide

Autor: Kai Su, and, Duane R. Bujalski, Eric S. Moyer, Alexis R. Brunner, Larry G. Sneddon

Publikováno v: Chemistry of Materials. 12:2770-2780

The design, synthesis, and properties of two new types of poly(borosiloxane) preceramic polymers, diethylborazine- (PVS−DEB) and pinacolborane-modified (PVS−PIN) poly(vinylsiloxane)s, are reported. The polymers are synthesized in excellent yields

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d116d7e5cebd32643955a8dd14615f7d
https://doi.org/10.1021/cm000317y

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A Spin-on Dielectric Material for High Aspect Ratio Gap Fill

Autor: Ather Ashraf, Eric S. Moyer, J. K. Lee, Edward Somerville, Sheng Wang, BK Hwang, Gerard Nowaczyk, Wei Chen

Publikováno v: MRS Proceedings. 863

This communication describes the results of a potential spin-on glass (SOG) solution for narrow and high aspect ratio trench fill in both shallow trench isolation (STI) and premetal dielectric (PMD) applications. We have focused our development work

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8404c9881d7858e51bb9f55a840a6680
https://doi.org/10.1557/proc-863-b8.5

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Ultra Low-k Dielectric Films with Ultra Small Pores Using Poragens Chemically Bonded to Siloxane Resin

Autor: Bianxiao Zhong, Eric S. Moyer

Publikováno v: ACS Symposium Series ISBN: 9780841238572
Polymers for Microelectronics and Nanoelectronics

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::509c3cab6f9b17d260aedd7dc6dcc991
https://doi.org/10.1021/bk-2004-0874.ch013

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Photodefinable Benzocyclobutene Formulations for Thin Film Microelectronic Applications. III. 1 to 20 Micron Patterned Films

Autor: M. J. Radler, Pamela S. Foster, Robert F. Harris, Eric S. Moyer, J. N. Bremmer, Edward W. Rutter, M. T. Bernius, D. Castillo, A. J. G. Strandjord, R.H. Heistand, G. S. Becker

Publikováno v: MRS Proceedings. 323

Negative working photodefinable benzocyclobutene formulations capable of obtaining patterned dielectric films from 1 to 20 microns thick are being developed using bisaryl azides as photocrosslinkers. Three different formulations are used to cover thi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d133970cb84ed4065c3cabd7172aefe5
https://doi.org/10.1557/proc-323-267

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