Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Eric P. Solecky"'
Autor:
Michael Lenahan, Dhairya Dixit, Eric P. Solecky, Charles Largo, Alok Vaid, Georgios Vakas, David Jayez, Steve Seipp
Publikováno v:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In this paper we will demonstrate a systematic approach for controlling the inputs around a measurement process which has been applied at GLOBALFOUNDRIES Fab 8. The approach covers a wide range of topics which are each individually known but not unif
Autor:
Janay Camp, Da Song, Samuel Gizzi, Alok Vaid, Alice Yueh, Sridhar Mahendrakar, Kartik Venkataraman, Tianhao Zhang, Eric P. Solecky, Michael Lenahan, Steven Seipp, Amir Heller, David Jayez, Shweta Saxena, Nam Hee Yoon
Publikováno v:
2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
In this paper we will demonstrate a systematic approach to significantly improve and sustain a large fleet of thickness metrology tools being used for several advanced nodes and products including 10/7nm at GLOBALFOUNDRIES Fab8 site. This challenge i
The primary charged-particle-based metrology system used today is the CD-SEM. It accelerates electrons across the measurement structure and looks at the electron yield for imaging. For the last 15 or so years, ion based imaging systems have been expl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e858dbf4ebf755ab30d1719f3d7414f
https://doi.org/10.1117/3.2197207.ch6
https://doi.org/10.1117/3.2197207.ch6
Photomask technology has become a critical part of IC manufacturing in recent years. It is the link between IC design and IC manufacturing through lithography and etch image-transfer processes. The heart of the enabling lithography technology (in kee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7acdf8f00e32e1be4c715d66535b375d
https://doi.org/10.1117/3.2197207.ch9
https://doi.org/10.1117/3.2197207.ch9
There are many different films in IC processes whose thicknesses must be tightly controlled following each deposition or growth step. In the FEOL and MOL, there are isolation films, such as silicon oxide (SiO2) and silicon nitride (SiN); poly silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7671f72dee0ec9673c5513673237951c
https://doi.org/10.1117/3.2197207.ch5
https://doi.org/10.1117/3.2197207.ch5
Dimensional metrology tools are increasingly challenged by the continuing decrease in the device dimensions, combined with complex disruptive materials and architectures. These demands are not being met by existing/forthcoming metrology techniques in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d68f25813aa6edd02308758a1235ac7e
https://doi.org/10.1117/3.2197207.ch8
https://doi.org/10.1117/3.2197207.ch8
This final chapter concludes with some suggestions for future metrology toolset improvements and other themes that require future consideration. Metrology has changed significantly in the past 15 years and will continue to change. It is hoped that th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37f2a3ac2b334166258a3d306c6c556e
https://doi.org/10.1117/3.2197207.ch10
https://doi.org/10.1117/3.2197207.ch10
Why must measurement system analysis (MSA), i.e., gauge study, be redefined? The existing literature does not make clear which metric should be used to compare measurement system performance against the requirements or specifications. The requirement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d4721671253f452cc983bce72a382d0
https://doi.org/10.1117/3.2197207.ch3
https://doi.org/10.1117/3.2197207.ch3
Many previously published documents exist describing how to perform measurement system analysis (also known as a gauge study). Some of the more prominent examples of this are the SEMI standard document SEMI E89-0707, a NIST technical note titled “G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51abbbb782cfaedc27c44fe4d2740713
https://doi.org/10.1117/3.2197207.ch2
https://doi.org/10.1117/3.2197207.ch2
Most optical results, such as composition/concentration, etc., are based on indirect measurements extracted using a model-based approach. Although the metrological performance of such measurements is satisfactory for most cases, they become inadequat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a11a7cbfdeceeeacaef6de95f93f2613
https://doi.org/10.1117/3.2197207.ch7
https://doi.org/10.1117/3.2197207.ch7