Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Eric P. Cotte"'
Autor:
Emily Y. Shu, Edward G. Lovell, Florence Eschbach, R.M. Calhoun, Daniel Tanzil, Roxann L. Engelstad, Eric P. Cotte, Yuri M. Shkel
Publikováno v:
Microelectronic Engineering. :187-192
The more stringent image placement error budgets for 157-nm lithography require a total assessment of photomask distortion sources and their eventual control. This includes proposed soft pellicle systems. Similar pellicles in use today have been prev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f006e45e04c7b5f20faa93eae02d10e4
https://doi.org/10.1016/s0167-9317(02)00525-7
https://doi.org/10.1016/s0167-9317(02)00525-7
Publikováno v:
Microelectronic Engineering. :461-466
One of the primary technologies proposed for the manufacturing of microcircuit devices in the sub-100 nm regime is electron-beam projection lithography (EPL). To meet the stringent error budgets, it is necessary to eliminate, minimize or correct for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::224bff397e1f7e0d3bc61e18be633d92
https://doi.org/10.1016/s0167-9317(01)00468-3
https://doi.org/10.1016/s0167-9317(01)00468-3
Autor:
Tammo Uitterdijk, Hitoshi Mishiro, Jae-hyuk Chang, Kaname Okada, Orlando Serapio Cicilia, Andrew Grenville, Peter De Bisschop, Roxann L. Engelstad, Eric P. Cotte, Chris K. Van Peski, Shinya Kikugawa, Richard Joseph Bruls, Michael Kocsis, Kazushige Ohta
Publikováno v:
SPIE Proceedings.
For 157 nm lithography the pellicle material will be most probably a 800 μm thick inorganic (fluorine doped fused silica) plate instead of a standard thin (~ 1 μm) organic (polymer) film. The thickness of the pellicle makes it an additional optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0849d351ab878ed4e3d03c43aa2fccd
https://doi.org/10.1117/12.568003
https://doi.org/10.1117/12.568003
Autor:
Amr Y. Abdo, Eric P. Cotte, Aaron J. Chalekian, Roxann L. Engelstad, Aya Diab, Edward G. Lovell, Chris K. Van Peski, Gregory F. Nellis
Publikováno v:
SPIE Proceedings.
Optical lithography with 157-nm light is expected to bridge the gap between 193-nm technology and next-generation lithography. One important practical difficulty facing the implementation of 157-nm technology is gas absorption of 157-nm light. The ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03662d5567c8a53d6a4518d4e2cf4f01
https://doi.org/10.1117/12.518125
https://doi.org/10.1117/12.518125
Autor:
Florence Eschbach, Eric P. Cotte, Hiroaki Nakagawa, Daniel Tanzil, Fujita Minoru, Roxann L. Engelstad, Edward G. Lovell, Yulia Korobko
Publikováno v:
SPIE Proceedings.
Lithography registration errors induced by the attachment of soft pellicles on reticles can significantly affect wafer overlay performance for sub-90 nm lithography chip manufacturing. Intel Corporation, Mitsui Chemicals, and the University of Wiscon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b04ad663113d356cdb3765c7b47465d
https://doi.org/10.1117/12.485474
https://doi.org/10.1117/12.485474
Autor:
Eric P. Cotte, Chris K. Van Peski, Phillip L. Reu, Roxann L. Engelstad, Andrew Grenville, Edward G. Lovell
Publikováno v:
SPIE Proceedings.
To meet the stringent image placement error budgets for the insertion of 157-nm lithography in the sub-65 nm regime, photomask-related distortions must be minimized, corrected, or possibly eliminated. Sources of distortions include the pellicle syste
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31193eec1e28b98887f55d31c315e31d
https://doi.org/10.1117/12.468606
https://doi.org/10.1117/12.468606
Autor:
Emily Y. Shu, Edward G. Lovell, Daniel Tanzil, Florence Eschbach, Roxann L. Engelstad, Eric P. Cotte
Publikováno v:
SPIE Proceedings.
Lithography registration errors induced by the attachment of soft pellicles on reticles can significantly affect wafer overlay performance for sub-100 nm lithography chip manufacturing. Intel Corporation and the University of Wisconsin have conducted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f14624ff80066f5d0f8c742bff37bcbc
https://doi.org/10.1117/12.476972
https://doi.org/10.1117/12.476972
Autor:
Roxann L. Engelstad, Hiroaki Nakagawa, Florence Eschbach, Daniel Tanzil, Fujita Minoru, Eric P. Cotte, Edward G. Lovell, Masaya Akiyama, Masahiro Kondo
Publikováno v:
SPIE Proceedings.
A comprehensive design of experiment was elaborated to evaluate the effects of frame flatness, mask adhesive compliance, and mounting load on pellicle-induced distortions for soft pellicle systems. A dynamic mechanical analyzer was used to determine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73c4b17a55f425011bd1031a3816a843
https://doi.org/10.1117/12.476974
https://doi.org/10.1117/12.476974
Autor:
Florence Eschbach, Fu-Chang Lo, Roxann L. Engelstad, Edward G. Lovell, Emily Y. Shu, Kaname Okada, Shinya Kikugawa, Eric P. Cotte
Publikováno v:
SPIE Proceedings.
Identifying a functional pellicle solution for 157-nm lithography remains the most critical issue for mask technology. Developing a hard pellicle system has been a recent focus of study. Fabrication and potential pellicle-induced image placement erro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e083e569444ec1d4afd01f4788e23ce
https://doi.org/10.1117/12.477011
https://doi.org/10.1117/12.477011
Autor:
Jaewoong Sohn, Edward G. Lovell, Andrew R. Mikkelson, Roxann L. Engelstad, Amr Y. Abdo, Eric P. Cotte
Publikováno v:
21st Annual BACUS Symposium on Photomask Technology.
Extending 157-nm lithography to the 70 nm node will be a difficult challenge due to the stringent requirements on image placement accuracy. At the University of Wisconsin Computational Mechanics Center, numerical and experimental studies are being co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9bfd87e49dc4a4ce194f27683d77253
https://doi.org/10.1117/12.458256
https://doi.org/10.1117/12.458256