Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Eric P Bernardo"'
Publikováno v:
Semiconductor Science and Technology. 33:055003
The current–voltage (I–V) characteristics of metal–semiconductor junction (Au–Ni/SnO2/Au–Ni) Schottky barrier in SnO2 nanowires were investigated over a wide temperature range. By using the Schottky–Mott model, the zero bias barrier heigh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbfc50a40b164dc952d0be917ceef63b
https://doi.org/10.1088/1361-6641/aab69e
https://doi.org/10.1088/1361-6641/aab69e
Publikováno v:
Journal of Applied Physics. 120:225109
We report on the growth and transport properties of single crystalline Sb doped SnO2 wires grown from chemical vapour deposition. While undoped samples presented semiconducting behaviour, doped ones clearly undergo a transition from an insulating sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::215e765abdbe7af13d1f2a4bacf26d6e
https://doi.org/10.1063/1.4971870
https://doi.org/10.1063/1.4971870
Autor:
Olivia M. Berengue, Edson R. Leite, Adenilson J. Chiquito, Eric P Bernardo, Cleber A. Amorim, Luana S. Araujo
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 24(22)
We report on the analysis of nonlinear current-voltage characteristics exhibited by a set of blocking metal/SnO(2)/metal. Schottky barrier heights in both interfaces were independently extracted and their dependence on the metal work function was ana
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5cffbd6973a259eca3b214d44a343f87
https://pubmed.ncbi.nlm.nih.gov/22556197
https://pubmed.ncbi.nlm.nih.gov/22556197
Publikováno v:
Semiconductor Science & Technology; May2018, Vol. 33 Issue 5, p1-1, 1p