Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Eric N. Jin"'
Autor:
Eric N. Jin, Brian P. Downey, Vikrant J. Gokhale, Jason A. Roussos, Matthew T. Hardy, Tyler A. Growden, Neeraj Nepal, D. Scott Katzer, Jeffrey P. Calame, David J. Meyer
Publikováno v:
APL Materials, Vol 9, Iss 11, Pp 111101-111101-9 (2021)
Epitaxial integration of perovskite oxide materials with GaN has unlocked the potential to improve functionality and performance in high-power RF and power-switching applications. In this work, we demonstrate structural and electrical properties of h
Externí odkaz:
https://doaj.org/article/2a93bf3d544c4a9b848e4371edc70cf9
Autor:
Alan Kramer, Neeraj Nepal, Eric N. Jin, D. Scott Katzer, Marko J. Tadjer, David J. Meyer, Alyssa Mock, John L. Lyons, Matthew T. Hardy
Publikováno v:
ACS Applied Materials & Interfaces. 12:52192-52200
ScAlN is an emergent ultrawide-band-gap material with both a high piezoresponse and demonstrated ferroelectric polarization switching. Recent demonstration of epitaxial growth of ScAlN on GaN has u...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d2c46279b4617cb640ade0893710b3b
https://doi.org/10.1021/acsami.0c15912
https://doi.org/10.1021/acsami.0c15912
Autor:
Brian P. Downey, David J. Meyer, Rhonda M. Stroud, D. Scott Katzer, Matthew T. Hardy, Andrew C. Lang, Neeraj Nepal, Eric N. Jin
Publikováno v:
Microscopy and Microanalysis. 27:2880-2881
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e0ed16cce3d1d3ecc179c6d5cd41450
https://doi.org/10.1017/s1431927621010035
https://doi.org/10.1017/s1431927621010035
Autor:
Eric N, Jin, Matthew T, Hardy, Alyssa L, Mock, John L, Lyons, Alan R, Kramer, Marko J, Tadjer, Neeraj, Nepal, D Scott, Katzer, David J, Meyer
Publikováno v:
ACS applied materialsinterfaces. 12(46)
ScAlN is an emergent ultrawide-band-gap material with both a high piezoresponse and demonstrated ferroelectric polarization switching. Recent demonstration of epitaxial growth of ScAlN on GaN has unlocked prospects for new high-power transistors and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::bc51b5305523c4f75b9716a4e72818f8
https://pubmed.ncbi.nlm.nih.gov/33146516
https://pubmed.ncbi.nlm.nih.gov/33146516
Autor:
Eric N. Jin, Brian P. Downey, J.A. Roussos, Vikrant J. Gokhale, David J. Meyer, Matthew T. Hardy
Publikováno v:
2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS).
This report presents some of the first experimental characterization of surface acoustic wave (SAW) devices using single-crystal ScAlN epitaxially grown on SiC. Due to the excellent wave guiding provided by the ScAlN/SiC heterostructure, SAW phase ve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d0666b3999941d527f6950e1c2175ce
https://doi.org/10.1109/mems46641.2020.9056271
https://doi.org/10.1109/mems46641.2020.9056271
Autor:
Brian P. Downey, David J. Meyer, D. Scott Katzer, David F. Storm, Guru Khalsa, Huili Xing, Neeraj Nepal, Matthew T. Hardy, Eric N. Jin, John Wright, Debdeep Jena, Rusen Yan
Publikováno v:
2019 Compound Semiconductor Week (CSW).
Integration of epitaxial superconducting layers with semiconductor devices is expected to enable substantial performance benefits, design flexibility, and creation of novel device structures. Integration of superconducting transition metal nitrides (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c86ba81fb5010e3eb525b529665d7ee
https://doi.org/10.1109/iciprm.2019.8819351
https://doi.org/10.1109/iciprm.2019.8819351
Publikováno v:
Applied Physics Letters. 117:232107
Tuning the optical, electronic, and long-wavelength properties of group-III nitride alloys can be achieved by alloying AlN with ScN. We report here on the infrared dielectric functions determined from spectroscopic ellipsometry of (0001) wurtzite Scx
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8af9b3ab54cdcf2aa9f913e264e4eb4d
https://doi.org/10.1063/5.0027364
https://doi.org/10.1063/5.0027364
Autor:
Jaime A. Freitas, Virginia D. Wheeler, Satish Kumar, Luke Yates, Eric N. Jin, Neeraj Nepal, David J. Meyer, D. Scott Katzer, Brian P. Downey, Diego Vaca, David F. Storm, Luke O. Nyakiti, Matthew T. Hardy, Samuel Graham
Publikováno v:
Journal of Vacuum Science & Technology A. 38:063406
β-Ga2O3 is a promising ultrawide bandgap semiconductor for next generation radio frequency electronics. However, its low thermal conductivity and inherent thermal resistance provide additional challenges in managing the thermal response of β-Ga2O3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fa92dd6a2c91d0208ef03ffdd889aba
https://doi.org/10.1116/6.0000452
https://doi.org/10.1116/6.0000452
Publikováno v:
MRS Advances. 1:287-292
Integrating oxide heterostructures on silicon has the potential to leverage the multifunctionalities of oxide systems into semiconductor device technology. We present the growth and characterization of two-dimensional electron gas (2DEG) oxide system
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74f733b31783685744e0657e41d6c730
https://doi.org/10.1557/adv.2016.95
https://doi.org/10.1557/adv.2016.95
Autor:
Neeraj Nepal, Andrew C. Lang, D. S. Katzer, David J. Meyer, Brian P. Downey, Eric N. Jin, Matthew T. Hardy, David F. Storm
Publikováno v:
Journal of Applied Physics. 127:214104
We demonstrate the epitaxial growth of (111)-oriented Sr1 − xCaxTiO3 (SCTO) thin films on (0002) GaN using a thin (100) TiO2 buffer layer by RF-plasma-assisted oxide molecular beam epitaxy. We explore the growth window of SCTO for both x = 0 (i.e.,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bbbfbfb14ed94d4ceabca525a883dcf
https://doi.org/10.1063/5.0007144
https://doi.org/10.1063/5.0007144