Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Eric L. Granstrom"'
Publikováno v:
Journal of Electrostatics. 59:229-240
Simulated ESD transients with pulsewidths from 0.1 to 10 ns were applied to GMR heads. From 1 to 10 ns essentially no changes in failure voltages are observed, but below approximately 1 ns, failure voltages increase. The time marking a transition bet
Publikováno v:
IEEE Transactions on Electronics Packaging Manufacturing. 24:86-89
Potentially damaging charging currents and voltages in wafer-level giant magnetoresistance (GMR) plasma processing tools have been measured using floating gate EEPROM (FG-EEPROM) monitor wafers. Although FG-EEPROM monitors have been used as semicondu
Publikováno v:
Advanced Materials. 12:285-288
Autor:
C. Daniel Frisbie, Eric L. Granstrom
Publikováno v:
The Journal of Physical Chemistry B. 103:8842-8849
Field effect conductance measurements were made on individual microscopic crystals of the organic semiconductor sexithiophene (6T). These crystals, ranging from 1 to 6 molecules (2−14 nm) in thickness and from 1 to 2 μm in diameter, were deposited
Publikováno v:
Advanced Materials. 11:261-264
Publikováno v:
Physical Review B. 72
Publikováno v:
Digest of INTERMAG 2003. International Magnetics Conference (Cat. No.03CH37401).
In this paper, we discuss about the degradation in magnetoresistive properties by short pulse zapping has been investigated for both spin valve (SV) and tunnelling giant magnetoresistive (GMR) heads of about 80 Gb/spl bsol/in/sup 2/ areal density. Si
Publikováno v:
MRS Proceedings. 488
Extremely thin, single crystals of sexithiophene (6T), 2–14 nm thick and 2–5 μm in length and width, can be grown an flat gold substrates by thermal evaporation. The thickness dimension corresponds to 1–6 monolayers (ML) of 6T molecules arrang
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