A time to failure evaluation of AlGaN/GaN HEMT transistors for RF applications

Autor: Olivier Latry, Niemat Moultif, Eric Joubert, Mohamed Ndiaye

Publikováno v: e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 2, Iss , Pp 100062- (2022)

This paper reports an evaluation of time to failure (TTF) of GaN transistors for 5G and RADAR applications. The TTF on Arrhenius curves are extrapolated from performed RF pulsed life tests with different input powers and duty cycles. The paper explai

Externí odkaz: https://doaj.org/article/97449a96f61a4939adecd7ade3123900

Thermal Analysis of AlGaN/GaN High-Electron Mobility Transistors Using I–V Pulsed Characterizations and Infra Red Microscopy

Autor: Eric Joubert, Andres Echeverri, Niemat Moultif, Dominique Carisetti, Olivier Latry

Publikováno v: IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2019, 19 (4), pp.704-710. ⟨10.1109/TDMR.2019.2950091⟩
IEEE Transactions on Device and Materials Reliability, 2019, 19 (4), pp.704-710. ⟨10.1109/TDMR.2019.2950091⟩

This paper presents a method based on IV pulsed characterizations to estimate the junction temperature of AlGaN/GaN high-electron mobility transistors (AlGaN/GaN HEMTs). This technique allows a 2D plan evaluation of the average temperature of the tra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3440ddb0bd2699681485b4d50fa3764
https://doi.org/10.1109/tdmr.2019.2950091

Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics

Autor: Mohamed Masmoudi, Wadia Jouha, Pascal Dherbécourt, Ahmed El Oualkadi, Eric Joubert

Publikováno v: IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability, 2020, 20 (3), pp.506-511. ⟨10.1109/TDMR.2020.2999029⟩
IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, In press, pp.1-1. ⟨10.1109/TDMR.2020.2999029⟩
IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2020, 20 (3), pp.506-511. ⟨10.1109/TDMR.2020.2999029⟩

The quality of the gate-oxide and Oxide/SiC interfaces is one of the crucial issues in the implementation of silicon carbide (SiC) Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) in the industrial power electronic applications. The main

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5dbe3b5addf973656313632a36d0aedb
https://normandie-univ.hal.science/hal-03174373

Localizing and analyzing defects in AlGaN/GaN HEMT using photon emission spectral signatures

Autor: Niemat Moultif, Eric Joubert, Alexis Divay, Olivier Latry

Publikováno v: Engineering Failure Analysis
Engineering Failure Analysis, Elsevier, 2017, 81, pp.69-78. ⟨10.1016/j.engfailanal.2017.07.014⟩
Engineering Failure Analysis, 2017, 81, pp.69-78. ⟨10.1016/j.engfailanal.2017.07.014⟩

This paper presents a reliability study of an AlGaN/GaN high electron mobility transistor (HEMT) by the photon emission (PE) and the spectral photon emission (SPE) techniques. The backside PE analysis of the studied AlGaN/GaN HEMT identifies PE signa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee5a6683fd2c2c3d5b31f7e54fa93222
https://doi.org/10.1016/j.engfailanal.2017.07.014

S-band pulsed-RF operating life test on AlGaN/GaN HEMT devices for radar application

Autor: Mamadou Ndiaye, Eric Joubert, Niemat Moultif, Olivier Latry, T. Neveu, C. Moreau, J-F. Goupy

Publikováno v: Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2019, 100-101, pp.113434. ⟨10.1016/j.microrel.2019.113434⟩
Microelectronics Reliability, 2019, 100-101, pp.113434. ⟨10.1016/j.microrel.2019.113434⟩

International audience; Reliability studies are fundamental to optimize the use of new emerging technologies such as AlGaN/GaN HEMTs. This paper reports a reliability study on two power amplifiers using AlGaN/GaN HEMT in real operating conditions for

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::290aedb437a0742bedf8a82634bfa9a6
https://hal.archives-ouvertes.fr/hal-02380186