Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Eric J. Sandouk"'
Publikováno v:
Science and Technology of Advanced Materials, Vol 16, Iss 4 (2015)
Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications. Here we investigate the nonlinear current–voltage behavior and resistive switching properties of co
Externí odkaz:
https://doaj.org/article/ae45828040eb469193e62c1508f3dd47
Autor:
Adam Z. Stieg, Audrius V. Avizienis, Henry O. Sillin, Renato Aguilera, Hsien-Hang Shieh, Cristina Martin-Olmos, Eric J. Sandouk, Masakazu Aono, James K. Gimzewski
Publikováno v:
Handbook of Memristor Networks ISBN: 9783319763743
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13b158aa92005f9f00bf1ea909a4ee8a
https://doi.org/10.1007/978-3-319-76375-0_14
https://doi.org/10.1007/978-3-319-76375-0_14
Autor:
Masakazu Aono, James K. Gimzewski, Renato J. Aguilera, Eric J. Sandouk, Kelsey Scharnhorst, Juan Pablo Carbajal, Adam Z. Stieg
Publikováno v:
Japanese Journal of Applied Physics. 57:03ED02
Complexity is an increasingly crucial aspect of societal, environmental and biological phenomena. Using a dense unorganized network of synthetic synapses it is shown that a complex adaptive system can be physically created on a microchip built especi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb7d82350a38cc40c5444a310d68ecbc
https://doi.org/10.7567/jjap.57.03ed02
https://doi.org/10.7567/jjap.57.03ed02
Publikováno v:
Science and technology of advanced materials, vol 16, iss 4
Science and Technology of Advanced Materials
Science and Technology of Advanced Materials, Vol 16, Iss 4 (2015)
Science and Technology of Advanced Materials
Science and Technology of Advanced Materials, Vol 16, Iss 4 (2015)
Resistive switching devices have garnered significant consideration for their potential use in nanoelectronics and non-volatile memory applications. Here we investigate the nonlinear current–voltage behavior and resistive switching properties of co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2fd570770f97dcf464b1d0701470add7
https://escholarship.org/uc/item/4683z3q9
https://escholarship.org/uc/item/4683z3q9
Autor:
Cristina Martin-Olmos, James K. Gimzewski, Renato J. Aguilera, Hsien-Hang Shieh, Masakazu Aono, Eric J. Sandouk, Henry O. Sillin, Audrius V. Avizienis, Adam Z. Stieg
Publikováno v:
Memristor Networks ISBN: 9783319026299
Handbook of Memristor Networks
Handbook of Memristor Networks
The self-organization of dynamical structures in complex natural systems is associated with an intrinsic capacity for computation. Beginning from the context of modern trends in neuromorphic engineering, this work introduces an effort toward the cons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bb28afdeb77551e818b21dfd233437d
https://doi.org/10.1007/978-3-319-02630-5_10
https://doi.org/10.1007/978-3-319-02630-5_10
Autor:
Masakazu Aono, Eric J. Sandouk, Henry O. Sillin, James K. Gimzewski, Adam Z. Stieg, Audrius V. Avizienis
Recent advances in nanoscale science and technology provide possibilities to directly self-assemble and integrate functional circuit elements within the wiring scheme of devices with potentially unique architectures. Electroionic resistive switching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50432895901e1bbc8c68de25d1dc937a
Autor:
Adam Z. Stieg, Renato J. Aguilera, Eric J. Sandouk, James K. Gimzewski, Henry O. Sillin, Masakazu Aono, Eleanor Demis, Kelsey Scharnhorst
Publikováno v:
Nanotechnology. 26:204003
Self-organized complex systems are ubiquitous in nature, and the structural complexity of these natural systems can be used as a model to design new classes of functional nanotechnology based on highly interconnected networks of interacting units. Co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29c58e475caf9f77667412fa89b71ecc
https://doi.org/10.1088/0957-4484/26/20/204003
https://doi.org/10.1088/0957-4484/26/20/204003
Autor:
Kelsey S. Scharnhorst, Juan P. Carbajal, Renato C. Aguilera, Eric J. Sandouk, Masakazu Aono, Adam Z. Stieg, James K. Gimzewski
Publikováno v:
Japanese Journal of Applied Physics; Mar2018, Vol. 57 Issue 3S2, p1-1, 1p