Zobrazeno 1 - 10
of 188
pro vyhledávání: '"Eric Hendrickx"'
Autor:
Vu Luong, Vicky Philipsen, Eric Hendrickx, Karl Opsomer, Christophe Detavernier, Christian Laubis, Frank Scholze, Marc Heyns
Publikováno v:
Applied Sciences, Vol 8, Iss 4, p 521 (2018)
Extreme ultraviolet (EUV) lithography is being industrialized as the next candidate printing technique for high-volume manufacturing of scaled down integrated circuits. At mask level, the combination of EUV light at oblique incidence, absorber thickn
Externí odkaz:
https://doaj.org/article/b0f1a5d806d64779ba1e19566d7153a5
Autor:
Inhwan Lee, Joern-Holger Franke, Vicky Philipsen, Kurt Ronse, Stefan De Gendt, Eric Hendrickx
Publikováno v:
Optical and EUV Nanolithography XXXVI.
Publikováno v:
Optical and EUV Nanolithography XXXVI.
Autor:
Joost Bekaert, Emily Gallagher, Marina Y. Timmermans, Ivan Pollentier, Rik Jonckheere, Remko Aubert, Eric Hendrickx
Publikováno v:
Optical and EUV Nanolithography XXXVI.
Autor:
Jara Santaclara, Weimin Gao, Eric Hendrickx, Vincent Wiaux, Joern-Holger Franke, Emily Gallagher, Kannan Keizer, Tatiana Kovalevich, Jo Finders
Publikováno v:
Optical and EUV Nanolithography XXXV.
Autor:
F. Schleicher, R. Blanc, P. Bezard, Mark John Maslow, Eric Hendrickx, Jara Garcia Santaclara, A. Moussa, J-H. Franke, A. Thiam, P. Wong
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2021.
The goal of this work is to prepare process readiness towards High NA EUV lithography, by using 0.33NA exposures on NXE3400B scanner. We focus on photoresists, underlayers and etch processes mitigation of P24nm Line Space patterns. Etch transfer has
Autor:
Lieve Van Look, Ivan Pollentier, Joost Bekaert, Alexander Klein, Remko Aubert, Emily Gallagher, Marina Y. Timmermans, Rik Jonckheere, Par Broman, Eric Hendrickx, Vineet Vijayakrishnan Nair, Gokay Yeğen
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 20
Extreme ultraviolet (EUV) lithography was recently implemented in high-volume wafer production. Consequently, maximizing yield is gaining importance. One key component to achieving optimal yield is using a pellicle to hold particles out of the focal
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XII.
An Extreme Ultra-Violet (EUV) photo mask is a complex engineering marvel. It is integral to semiconductor manufacturing, as it holds the design layout information intended for the device. The mask complexity allows many potential points of variation
Autor:
Mark John Maslow, Natalia Davydova, Joost Bekaert, Erik Wang, Andreas Frommhold, Gijsbert Rispens, Vineet Vijayakrishnan Nair, David Rio, Tatiana Kovalevich, Remko Aubert, Eric Hendrickx, Joern-Holger Franke
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XII.
We evaluated the printability of patterns relevant for Logic Metal at P28nm (L/S and T2T) on wafer using EUV single expose. We compare illumination sources with and without fading correction as well as Bright field / Dark field mask tonalities and NT
Autor:
Rik Jonckheere, Henk A. Lensen, Chien-Ching Wu, Frank Scholze, Claudia Zech, Remko Aubert, Veronique de Rooij-Lohmann, Michael Kolbe, Philipp Hönicke, Vineet Vijayakrishnan Nair, Victor Soltwisch, Dorus Elstgeest, Eric Hendrickx
Publikováno v:
Extreme Ultraviolet Lithography 2020
A parallelism is reported between reticle lifetime experiments undertaken on TNO’s EBL2 platform and wafer printing on the ASML NXE EUV scanner installed at imec. EBL2 mimics reticle impact due to exposure of ten thousand wafers in NXE representati