Zobrazeno 1 - 10
of 100
pro vyhledávání: '"Eric G. Liniger"'
Autor:
Hosadurga Shobha, Donald F. Canaperi, Chao-Kun Hu, Son V. Nguyen, Junedong Lee, Eric G. Liniger, Yongjin Yao, Griselda Bonilla, Chen Jia, Takeshi Nogami, Huai Huang, Stephan A. Cohen, B. Peethala, Theodorus E. Standaert, Thomas J. Haigh
Publikováno v:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Mechanically robust low k C-rich SiCN and pSiCN dielectrics with excellent built-in Cu oxidation and diffusion barrier have been developed and evaluated as potential alternative low k Interlevel dielectrics for Cu interconnects. The novel low k dense
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b57761bf476d1141f25f19d05931f4e2
https://doi.org/10.1109/vlsi-tsa48913.2020.9203631
https://doi.org/10.1109/vlsi-tsa48913.2020.9203631
Publikováno v:
Microelectronic Engineering. 147:100-103
Display Omitted Water incursion into low-k BEOL capacitors was monitored via impedance spectroscopy.It is a non-destructive, zero DC field, low AC field probe (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::280c5e2c7266fbfed8361e5f0bf64ee1
https://doi.org/10.1016/j.mee.2015.04.020
https://doi.org/10.1016/j.mee.2015.04.020
Autor:
Son Nguyen, Daniel C. Edelstein, Stephen M. Gates, Vamsi Paruchuri, Chen Jia, Pranita Kerber, T. Hook, Deepika Priyadarshini, Clevenger Leigh Anne H, B. Peethala, Hosadurga Shobha, P. McLaughlin, Chao-Kun Hu, Griselda Bonilla, Jia Lee, Elbert E. Huang, Christopher J. Penny, Indira Seshadri, Eric G. Liniger, Roger A. Quon
Publikováno v:
2017 IEEE International Interconnect Technology Conference (IITC).
This paper demonstrates the first reliable and low cost airgap BEOL technology, generated at extremely tight dimensions (48 nm pitch) in Cu/ULK. This provides 20% nested-line capacitance reduction relative to the ungapped Cu/ULK baseline. This result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::387dfdb3564acbd1a3442832c5ddc82e
https://doi.org/10.1109/iitc-amc.2017.7968970
https://doi.org/10.1109/iitc-amc.2017.7968970
Autor:
Christopher J. Waskiewicz, Hideyuki Tomizawa, Muthumanickam Sankarapandian, Mignot Yann, Marcy Beard, Chiahsun Tseng, Yannick Loquet, Terry A. Spooner, Philip L. Flaitz, Eric G. Liniger, Shyng-Tsong Chen, James Hsueh-Chung Chen, Bryan Morris, Walter Kleemeier
Publikováno v:
Microelectronic Engineering. 107:138-144
In the attempts to push the resolution limits of 193nm immersion lithography, this work demonstrates the building of 3 metal level 56nm pitch copper dual-damascene interconnects, using Negative-Tone Development Lithography-Etch-Lithography-Etch (LELE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74494c1675902227ef4f76a0cced8bf8
https://doi.org/10.1016/j.mee.2012.09.008
https://doi.org/10.1016/j.mee.2012.09.008
Autor:
Donald F. Canaperi, Raghuveer R. Patlolla, Daniel C. Edelstein, Griselda Bonilla, Huai Huang, Wei Wang, E. Todd Ryan, Paul S. McLaughlin, Xunyuan Zhang, Juntao Li, Terry A. Spooner, Eric G. Liniger, Frank W. Mont, Chao-Kun Hu, C. Labelle
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
48 nm pitch dual damascene interconnects are patterned and filled with ruthenium. Ru interconnect has comparable high yield for line and via macros. Electrical results show minimal impact for via resistance and around 2 times higher line resistance.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38407d3e5ed6268183f862873faae6ac
https://doi.org/10.1109/iitc-amc.2016.7507650
https://doi.org/10.1109/iitc-amc.2016.7507650
Autor:
Takeshi Nogami, Praneet Adusumilli, Hosadurga Shobha, Frank W. Mont, Vimal Kamineni, Donald F. Canaperi, Elbert E. Huang, Chenming Hu, Huai Huang, James J. Kelly, B. Peethala, Terry A. Spooner, Chen Jia, Eric G. Liniger, Shariq Siddiqui, Daniel C. Edelstein, Raghuveer R. Patlolla
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
We characterize integrated dual damascene Co and Cu BEOL lines and vias, at 10 nm node dimensions. The Co to Cu line resistance ratios for 24 nm and 220 nm wide lines were 2.1 and 3.5, respectively. The Co via resistance was just 1.7 times that of Cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73e3908c933c8bb1a8d60a593beca44b
https://doi.org/10.1109/iitc-amc.2016.7507673
https://doi.org/10.1109/iitc-amc.2016.7507673
Autor:
Daniel C. Edelstein, Wei Wang, Roger A. Quon, Terry A. Spooner, C.-C. Yang, Eric G. Liniger, Chenming Hu, Theodorus E. Standaert, J. Maniscalco, P. McLaughlin, Donald F. Canaperi, Elbert E. Huang
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
Adhesion tests, parametric measurements, and reliability evaluations of an in-situ pre-liner dielectric nitridation process prior to pure Ta liner deposition were carried out, to evaluate the feasibility of reducing via resistance in BEOL Cu/low-k in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7d7561632ee10954c64f39ef282f453
https://doi.org/10.1109/iitc-amc.2016.7507692
https://doi.org/10.1109/iitc-amc.2016.7507692
Autor:
Chenming Hu, E. Adams, J. Burnham, Deepika Priyadarshini, Donald F. Canaperi, Daniel C. Edelstein, Hosadurga Shobha, C. Parks, Timothy M. Shaw, Son Nguyen, D. Collins, Stephan A. Cohen, Vamsi Paruchuri, Terry A. Spooner, Alfred Grill, Eric G. Liniger
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
Multi-layer SiNO barrier film with high breakdown and low leakage is developed for Cu low k interconnects and is compared with the SiCN and SiN barrier films used at previous technology nodes. Combining SiCN with multi-layer SiNO barrier film provide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a5babc891aae85257aeb919263786cb
https://doi.org/10.1109/iitc-amc.2016.7507693
https://doi.org/10.1109/iitc-amc.2016.7507693
Autor:
Terry A. Spooner, Joe Lee, Alfred Grill, Huai Huang, Eric G. Liniger, B. Peethala, Willi Volksen, Hosadurga Shobha, Krystelle Lionti, Chao-Kun Hu, Griselda Bonilla, Theodorus E. Standaert, Donald F. Canaperi, Elbert E. Huang, Geraud Dubois, Teddie Magbitang, James Hsueh-Chung Chen, Daniel C. Edelstein
Publikováno v:
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC).
Integration of high porosity low-k dielectrics faces major challenges as the porosity weakens the dielectric, resulting in severe plasma induced damage (PID) and difficulties in profile control. Post porosity plasma protection (P4) integration strate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98e08cd03f73c45a2f4d64a9c1a1e088
https://doi.org/10.1109/iitc-amc.2016.7507715
https://doi.org/10.1109/iitc-amc.2016.7507715
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
TDDB lifetime projections at operating voltages for backend of line (BEOL) dielectrics have been based on accelerated testing at high fields and extrapolation to operating conditions based on electric field dependent dielectric wear-out models. In th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a30cccefc1f8c1ad492c9ab2f12b1dc3
https://doi.org/10.1109/irps.2016.7574598
https://doi.org/10.1109/irps.2016.7574598