Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition

Autor: Marianna Španková, Štefan Chromik, Edmund Dobročka, Lenka Pribusová Slušná, Marcel Talacko, Maroš Gregor, Béla Pécz, Antal Koos, Giuseppe Greco, Salvatore Ethan Panasci, Patrick Fiorenza, Fabrizio Roccaforte, Yvon Cordier, Eric Frayssinet, Filippo Giannazzo

Publikováno v: Nanomaterials, Vol 13, Iss 21, p 2837 (2023)

In this paper, we present the preparation of few-layer MoS2 films on single-crystal sapphire, as well as on heteroepitaxial GaN templates on sapphire substrates, using the pulsed laser deposition (PLD) technique. Detailed structural and chemical char

Externí odkaz: https://doaj.org/article/599297df99194f91b0d35d267721607d

Micro-Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications

Autor: Atse Julien Eric N’Dohi, Camille Sonneville, Luong Viet Phung, Thi Huong Ngo, Philippe De Mierry, Eric Frayssinet, Hassan Maher, Josiane Tasselli, Karine Isoird, Frédéric Morancho, Yvon Cordier, Dominique Planson

Publikováno v: AIP Advances, Vol 12, Iss 2, Pp 025126-025126-5 (2022)

N-doped homo-epitaxial GaN samples grown on freestanding GaN substrates have been investigated by micro-Raman spectroscopy. Quantitative analysis of the E2h and the A1(LO) modes’ behavior has been performed while intentionally increasing the carrie

Externí odkaz: https://doaj.org/article/b8a22a4da0b34db798cd30537951cf86

Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution

Autor: Nedal Al Taradeh, Eric Frayssinet, Christophe Rodriguez, Frederic Morancho, Camille Sonneville, Luong-Viet Phung, Ali Soltani, Florian Tendille, Yvon Cordier, Hassan Maher

Publikováno v: Energies, Vol 14, Iss 14, p 4241 (2021)

This paper proposes a new technique to engineer the Fin channel in vertical GaN FinFET toward a straight and smooth channel sidewall. Consequently, the GaN wet etching in the TMAH solution is detailed; we found that the m-GaN plane has lower surface

Externí odkaz: https://doaj.org/article/8b2a06d400e343b6992add83408b201a

Fabrication, and direct current and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes

Autor: Quentin Fornasiero, Nicolas Defrance, Sylvie Lepilliet, Vanessa Avramovic, Yvon Cordier, Eric Frayssinet, Marie Lesecq, Nadir Idir, Jean-Claude De Jaeger

Publikováno v: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2023, 41 (1), pp.012202. ⟨10.1116/6.0002125⟩

Schottky contacts on fluorine implanted AlGaN/GaN heterostructures with the ideality factor close to unity and low on-voltage threshold are presented in this paper. An SF6 plasma anode pretreatment followed by a specific low-temperature annealing is

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35c5bc49021ea17b375df29250c07a6b
https://hal.science/hal-03917965

Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors

Autor: Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher, Yvon Cordier

Publikováno v: Journal of Crystal Growth
Journal of Crystal Growth, 2022, 593, pp.126779. ⟨10.1016/j.jcrysgro.2022.126779⟩

International audience; In the present study, the selective sublimation of the p-GaN cap layer of Al(Ga)N/GaN HEMTs is developed to replace the commonly used dry etching with no risk of damage in the barrier layer in order to fabricate enhanced mode

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e99464295d6e8d6fbdb725e1ac0d3f14
https://hal.science/hal-03741626