Zobrazeno 1 - 10
of 126
pro vyhledávání: '"Eric Feltin"'
Autor:
Marianne Consonni, Michele D'Amico, Patrick Demars, Myriam Tournaire, Jean-Christophe Pillet, Jean Michel Lamy, Alexandre Lagrange, Margaux Vigier, Cao Edgar, Aurélien Suhm, Eric Feltin, Laurent Charrier, Badhise Ben Bakir, Philippe Coni, Valentin Le Marchand, Gunther Haas, Etienne Quesnel, Nicolas Olivier
Publikováno v:
Journal of the Society for Information Display
Journal of the Society for Information Display, Society for Information Display(AIP), 2020, ⟨10.1002/jsid.884⟩
Journal of the Society for Information Display, 2020, ⟨10.1002/jsid.884⟩
Journal of the Society for Information Display, Society for Information Display(AIP), 2020, ⟨10.1002/jsid.884⟩
Journal of the Society for Information Display, 2020, ⟨10.1002/jsid.884⟩
International audience; This paper focuses on the dimensioning of a very bright full color 10 μm-pitch light-emitting device (LED) microdisplay for avionics application. Starting from the specifications of head-mounted display to be used in an augme
We report on carrier injection features in light-emitting diodes (LEDs) based on nonintentionally doped-ZnO/p-GaN heterostructures. These LEDs consist of a ZnO layer grown by chemical-bath deposition (CBD) onto a p-GaN template without using any seed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48bf9e1f4e8096d1afc0fb297257b975
http://hdl.handle.net/10447/386591
http://hdl.handle.net/10447/386591
Autor:
Fulvio Caruso, Filippo Saiano, Roberto Macaluso, Claudio Cali, Eric Feltin, Mauro Mosca, Salvatore Rinella
Publikováno v:
Journal of Electronic Materials. 45:682-687
We report on the properties of a poly(methyl methacrylate)-based coating used as a host for an organic dye in hybrid white light-emitting diodes. The device is composed by a pump source, which is a standard inorganic GaN/InGaN blue light-emitting dio
Autor:
Roberto Macaluso, D. C. Russotto, Isodiana Crupi, Mauro Mosca, Giuseppe Lullo, Eric Feltin, C. Giaconia, Salvatore Mirabella
Publikováno v:
RTSI
A way to grow and characterize isolated and coalesced ZnO nanorods on $p$ -GaN/sapphire structure is presented. Chemical bath deposition can be used to grow ZnO nanorods of device-quality, simply controlling the duration time of the growth process an
Autor:
Lin Zhou, M. Gonschorek, David J. Smith, J.-F. Carlin, Anas Mouti, McCartney, David A. Cullen, Eric Feltin, Nicolas Grandjean
Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce45e3e0a7a2d4ff13354a87ab31bb7d
http://doc.rero.ch/record/289295/files/S1431927609097499.pdf
http://doc.rero.ch/record/289295/files/S1431927609097499.pdf
Autor:
Raphaël Butté, Marlene Glauser, Nicolas Grandjean, Christian Mounir, Georg Rossbach, Jean-François Carlin, Eric Feltin
Publikováno v:
JOURNAL OF APPLIED PHYSICS
Contrary to the case of III-nitride based visible light-emitting diodes for which the inhomogeneous linewidth broadening characteristic of InGaN-based multiple quantum well (MQW) heterostructures does not appear as a detrimental parameter, such a bro
Autor:
D. Simeonov, Jean-Daniel Ganière, Pierre Corfdir, Nicolas Grandjean, Benoit Deveaud-Plédran, Eric Feltin, Pierre Lefebvre, Jean-François Carlin
Publikováno v:
(10th Int. Workshop on Beam Injection Assessment of Microstructures in Semicond-BIAMS 2010jul. 2010
Otwin Breitenstein, Hartmut S. Leipner. (10th Int. Workshop on Beam Injection Assessment of Microstructures in Semicond-BIAMS 2010jul. 2010, Jul 2010, Halle, Germany. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 8 (4), pp.1394, 2011, ⟨10.1002/pssc.201084005⟩
Otwin Breitenstein, Hartmut S. Leipner. (10th Int. Workshop on Beam Injection Assessment of Microstructures in Semicond-BIAMS 2010jul. 2010, Jul 2010, Halle, Germany. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, 8 (4), pp.1394, 2011, ⟨10.1002/pssc.201084005⟩
International audience; We present a low-temperature time-resolved cathodoluminescence study on (In,Ga)N/GaN quantum wells grown on the (11-22) facets of non-coalesced ELO-GaN. Taking advantage of the quantum confined Stark effect, such structures ha
Autor:
M. Gonschorek, Jean-François Carlin, Haifeng Sun, A.R. Alt, Colombo R. Bolognesi, H. Benedickter, Nicolas Grandjean, Eric Feltin
Publikováno v:
physica status solidi (a). 208:429-433
A comparison of devices with different source-drain gaps has been performed on AlInN/GaN high electron mobility transistors (HEMTs) grown on SiC. The cut-off frequency is effectively improved through shrinking source drain space and reducing gate par
Publikováno v:
International Journal of Microwave and Wireless Technologies. 2:13-20
This paper discusses the determination of key electrical parameters of AlInN/(AlN)/GaN heterostructures from capacitance–voltage (CV) measurements. These heterostructures gained recently importance since they allow for high electron mobility transi
Autor:
Eric Feltin, G. Pozzovivo, Nicolas Grandjean, J.-F. Carlin, Gottfried Strasser, Dionyz Pogany, M. Gonschorek, Emmerich Bertagnolli, S. Abermann, Jan Kuzmik
Publikováno v:
IEEE Transactions on Electron Devices. 55:937-941
We present the technology and performance of InAlN/AlN/GaN MOS HEMTs with gate insulation and surface passivation using Zr or Hf . About 10-nm-thick high- dielectrics were deposited by MOCVD before the ohmic contact processing. Plasma pretreatment al