Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Eric Daniel Jones"'
Publikováno v:
Semiconductor Science and Technology. 17:843-850
We present a unified picture of our studies of the nitrogen-specific properties of InGaAsN. Nitrogen-induced bandgap reduction and symmetry-breaking are examined with band-structure calculations and pressure-dependent optical measurements for an idea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18654fb50a6c58eb13226ced4320b1d8
https://doi.org/10.1088/0268-1242/17/8/313
https://doi.org/10.1088/0268-1242/17/8/313
Autor:
Y. L. Soo, A. A. Allerman, John F. Geisz, Y. H. Kao, Jingguang G. Chen, Sarah Kurtz, S. Huang, S. L. Hulbert, J. M. Olson, Eric Daniel Jones, Steven R. Kurtz
Publikováno v:
Physical Review B. 60:13605-13611
The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a639dc98fb69adfa17073dcb791f02cb
https://doi.org/10.1103/physrevb.60.13605
https://doi.org/10.1103/physrevb.60.13605
Autor:
Yong Zhang, Christian Geng, F. Scholz, Angelo Mascarenhas, Eric Daniel Jones, Heinz Schweizer, P. Ernst, F. A. J. M. Driessen
Publikováno v:
Journal of Applied Physics. 81:2814-2817
Photoluminescence measurements in a magnetic field between 0 and 13.6 T were carried out on CuPtB-ordered GaInP at liquid-helium temperature. Four samples of different degrees of ordering (η, varying from 0 to 0.54) were studied. Experimental result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcbc099d738e83e65deb3d4413a00013
https://doi.org/10.1063/1.363938
https://doi.org/10.1063/1.363938
Autor:
S. W. Tozer, Gregory M. Peake, X. Wei, Ramazan Tuğrul Senger, K.E. Waldrip, John F. Klem, Eric Daniel Jones, K. K. Bajaj, F. Jalali, Normand A. Modine
Publikováno v:
Applied Physics Letters. 83:5425-5427
We report a measurement of the variation of the diamagnetic shift of a heavy-hole exciton in a single coherently strained GaAs0.685Sb0.3N0.015/GaAs quantum well as a function of magnetic field up to 32 T at 1.3 K using photoluminescence spectroscopy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d81afa21038bc0b96b1e69ccae35570c
https://doi.org/10.1063/1.1637439
https://doi.org/10.1063/1.1637439
Autor:
Eric Daniel Jones, K. K. Bajaj, John F. Klem, S. W. Tozer, Normand A. Modine, Gregory M. Peake, X. Wei, F. Jalali, Ramazan Tuğrul Senger, K.E. Waldrip
Publikováno v:
Applied Physics Letters. 83:2614-2616
We have measured the diamagnetic shift of a heavy-hole exciton in a single 60 A wide GaAs0.7Sb0.3/GaAs quantum well as a function of magnetic field up to 32 T at 1.3 K using photoluminescence spectroscopy. The sample was grown on (001)-oriented GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25323ddcf3e47d61e9d87273ad1578de
https://doi.org/10.1063/1.1615680
https://doi.org/10.1063/1.1615680
Autor:
Eric Daniel Jones, Angelo Mascarenhas, Andrew G. Norman, John L. Reno, David M. Follstaedt, S. R. Lee, Sebastien Francoeur
Publikováno v:
Applied Physics Letters. 81:529-531
We present the optical and structural characterization of a two-dimensional array of self-organized AlInAs quantum wires. The structure was created by epitaxially stacking along the [001] direction thin self-assembled, [100]-oriented, superlattices s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f032733c300cea510e9fee7938ed93f
https://doi.org/10.1063/1.1493222
https://doi.org/10.1063/1.1493222
Autor:
R. M. Sieg, Eric Daniel Jones, Steven R. Kurtz, John F. Klem, C. H. Seager, Andrew A. Allerman
Publikováno v:
Applied Physics Letters. 80:1379-1381
To gain insight into the nitrogen-related defects of InGaAsN, nitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (1.1 eV band gap) grown by molecular beam epitaxy (MBE). Annealing promo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e4ff69ba3811bed224daa816bb2a090
https://doi.org/10.1063/1.1453480
https://doi.org/10.1063/1.1453480
Autor:
David M. Follstaedt, Eric Daniel Jones, Andrew G. Norman, John L. Reno, S. R. Lee, R. D. Twesten, Helio R. Moutinho, Angelo Mascarenhas
Publikováno v:
Applied Physics Letters. 77:669-671
Growth of InAs/AlAs short-period superlattices on appropriately miscut (001) InP substrates is shown to alter the microstructure of composition modulation from a 2D organization of short compositionally enriched wires to a single dominant modulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a279c67d1c4991a839204d75abf0cbd9
https://doi.org/10.1063/1.127080
https://doi.org/10.1063/1.127080
Publikováno v:
Applied Physics Letters. 77:400-402
Electron and hole transport in compensated, InGaAsN ({approx} 2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and dopi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cc752a345883cc1b76fddcef8869e5f
https://doi.org/10.1063/1.126989
https://doi.org/10.1063/1.126989
Publikováno v:
Applied Physics Letters. 76:188-190
Time-resolved photoluminescence spectroscopy has been used to investigate carrier decay dynamics in a InxGa1−xAs1−yNy (x∼0.03, y∼0.01) epilayer grown on GaAs by metal organic chemical vapor deposition. Time-resolved photoluminescence (PL) mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7721441ada43ca04d37f5241073a425
https://doi.org/10.1063/1.125698
https://doi.org/10.1063/1.125698