Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Eric Calle"'
Autor:
A. Alcañiz, Gema López, Eloi Ros, Isidro Martín, Ramon Alcubilla, Alejandro Datas, Eric Calle, Luis G. Gerling, A. Jiménez, C. del Cañizo, Cristobal Voz
Publikováno v:
Recercat. Dipósit de la Recerca de Catalunya
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Solar Energy, ISSN 0038-092X, 2019, Vol. 181
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Solar Energy, ISSN 0038-092X, 2019, Vol. 181
© Elsevier. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/ Very thin, thermally evaporated MoOx (x¿
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0bc609a1237322d73fd569284552517c
https://doi.org/10.1016/j.solener.2019.02.009
https://doi.org/10.1016/j.solener.2019.02.009
Autor:
Guillaume von Gastrow, Anna Fontcuberta i Morral, Andreana Daniil, Tara Nietzold, Elias Z. Stutz, Hele Savin, Eric Calle, Ramon Alcubilla, Sebastian Husein, Pablo Ortega, Mariana I. Bertoni
We study doping and metallization of black silicon (bSi) boron emitters formed by ion implantation or diffusion. We demonstrate that conformal metal layers can be deposited on bSi by electron beam evaporation. Raman spectroscopy shows that high boron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c7e34c73c50cac3914eb0d831d85293
https://aaltodoc.aalto.fi/handle/123456789/36306
https://aaltodoc.aalto.fi/handle/123456789/36306
Autor:
Ramon Alcubilla, Pablo Ortega, Päivikki Repo, Guillaume von Gastrow, Eric Calle, David Carrió, Hele Savin
Publikováno v:
Progress in Photovoltaics: Research and Applications. 23:1448-1457
This work demonstrates the high potential of Al2O3 passivated black silicon in high-efficiency interdigitated back contacted (IBC) solar cells by reducing surface reflectance without jeopardizing surface passivation. Very low reflectance values, belo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d37c330cafe1fe859902466190426d96
https://doi.org/10.1002/pip.2664
https://doi.org/10.1002/pip.2664
Autor:
Eric Calle, Guillaume von Gastrow, Ramon Alcubilla, Päivikki Repo, Hele Savin, Pablo Ortega, M. Garín
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname
The nanostructuring of silicon surfaces—known as black silicon—is a promising approach to eliminate front-surface reflection in photovoltaic devices without the need for a conventional antireflection coating. This might lead to both an increase i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff42136a9426ddb64316611b023e2e39
http://hdl.handle.net/2117/81173
http://hdl.handle.net/2117/81173
Autor:
Joaquim Puigdollers, Cristobal Voz, Ramon Alcubilla, Gema López, Eric Calle, David Carrió, Albert Orpella, Isidro Martín, Pedro A. Ortega
Publikováno v:
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname
Universitat Politècnica de Catalunya (UPC)
Recercat. Dipósit de la Recerca de Catalunya
instname
In this work we describe a baseline fabrication process of interdigitated-back-contact c-Si(p) solar cells, which combines conventional diffusion oven stages to define base p+ and emitter n+ regions at the backside, with front surface passivation usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f73af1580eecd3cf7034254892c37d3b
Autor:
Gerard Masmitja, Ramon Alcubilla, Eric Calle, Gema López, Cristobal Voz, M. Garcia, Albert Orpella, Isidro Martín, Pedro A. Ortega
Publikováno v:
2013 Spanish Conference on Electron Devices.
In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ALD technique. This study co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::988b9eaa4c26ef953913fed42912db54
https://doi.org/10.1109/cde.2013.6481409
https://doi.org/10.1109/cde.2013.6481409
Autor:
Eric Calle, Gerard Masmitja, Ramon Alcubilla, Joaquim Puigdollers, Cristobal Voz, Gema López, Pedro A. Ortega, Isidro Martín, Albert Orpella, David Carrió
Publikováno v:
Recercat. Dipósit de la Recerca de Catalunya
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
In this work we show a baseline fabrication process of interdigitated back contacted IBC c-Si(p) solar cells, which combines conventional diffusion oven stages to define base p+ and emitter n+/n++ regions at the back side, with outstanding front surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8bcd61f71f9cf56c1461489b5fd13cd0
http://hdl.handle.net/2117/108077
http://hdl.handle.net/2117/108077
Publikováno v:
Recercat. Dipósit de la Recerca de Catalunya
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
instname
UPCommons. Portal del coneixement obert de la UPC
Universitat Politècnica de Catalunya (UPC)
In this work we report on the long-term stability of black silicon surfaces passivated with atomic layer deposited (ALD) 20 nm thick Al2O3 films on p- and n-type FZ c-Si substrates. The results are directly compared with random pyramid textured count
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e994156ecbe1e04b39952a17280c2858
http://hdl.handle.net/2117/105360
http://hdl.handle.net/2117/105360